No Cover Image

Journal article 420 views

Quantum Corrections Based on the 2-D Schrödinger Equation for 3-D Finite Element Monte Carlo Simulations of Nanoscaled FinFETs / Jari Lindberg; Manuel Aldegunde; Daniel Nagy; Wulf G. Dettmer; Karol Kalna; Antonio Jesus Garcia-Loureiro; Djordje Peric

IEEE Transactions on Electron Devices, Volume: 61, Issue: 2, Pages: 423 - 429

Swansea University Author: Kalna, Karol

Full text not available from this repository: check for access using links below.

Abstract

A 2D Schroedinger equation is solved across the channel using a finite element (FE) method implemented into a 3D FE ensemble Monte Carlo (MC) device simulation toolbox as quantum corrections. These 2D FE Schroedinger equation based quantum corrections are entirely calibration free and can accurately...

Full description

Published in: IEEE Transactions on Electron Devices
ISSN: 0018-9383 1557-9646
Published: 2014
Online Access: Check full text

URI: https://cronfa.swan.ac.uk/Record/cronfa21847
Tags: Add Tag
No Tags, Be the first to tag this record!
Abstract: A 2D Schroedinger equation is solved across the channel using a finite element (FE) method implemented into a 3D FE ensemble Monte Carlo (MC) device simulation toolbox as quantum corrections. These 2D FE Schroedinger equation based quantum corrections are entirely calibration free and can accurately describe quantum confinement effects in arbitrary device cross-sections. The 3D FE quantum corrected MC simulations are based on the tetrahedral decomposition of the simulation domain and the 2D Schroedinger equation is solved at defined cross-section planes of the 3D mesh along the transport direction. We apply the method to study output characteristics of a 10.7 nm gate length non-planar silicon-on-insulator (SOI) FinFET, investigating <100> and <110> channel orientations. The simulated I-V characteristics are compared with those obtained from 3D FE MC simulations with quantum corrections using the density gradient method showing currents but very different density distributions.
College: College of Engineering
Issue: 2
Start Page: 423
End Page: 429