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Controlling the Electrical Transport Properties of Nanocontacts to Nanowires / Alex M. Lord; Thierry G. Maffeis; Olga Kryvchenkova; Richard J. Cobley; Karol Kalna; Despoina M. Kepaptsoglou; Quentin M. Ramasse; Alex S. Walton; Michael B. Ward; Jürgen Köble; Steve P. Wilks

Nano Letters, Volume: 15, Issue: 7, Pages: 4248 - 4254

Swansea University Author: Cobley, Richard

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DOI (Published version): 10.1021/nl503743t

Abstract

The ability to control the properties of electrical contacts to nanostructures is essential to realize operational nanodevices. Here, we show that the electrical behavior of the nanocontacts between free-standing ZnO nanowires and the catalytic Au particle used for their growth can switch from Schot...

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Published in: Nano Letters
ISSN: 1530-6984 1530-6992
Published: 2015
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URI: https://cronfa.swan.ac.uk/Record/cronfa23334
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Abstract: The ability to control the properties of electrical contacts to nanostructures is essential to realize operational nanodevices. Here, we show that the electrical behavior of the nanocontacts between free-standing ZnO nanowires and the catalytic Au particle used for their growth can switch from Schottky to Ohmic depending on the size of the Au particles in relation to the cross-sectional width of the ZnO nanowires. We observe a distinct Schottky to Ohmic transition in transport behavior at an Au to nanowire diameter ratio of 0.6. The current–voltage electrical measurements performed with a multiprobe instrument are explained using 3-D self-consistent electrostatic and transport simulations revealing that tunneling at the contact edge is the dominant carrier transport mechanism for these nanoscale contacts. The results are applicable to other nanowire materials such as Si, GaAs, and InAs when the effects of surface charge and contact size are considered.
Keywords: Current crowding, ZnO, simulation, two-point probe
College: College of Engineering
Issue: 7
Start Page: 4248
End Page: 4254