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Nondestructive Method for Mapping Metal Contact Diffusion in In2O3Thin-Film Transistors / Olga Kryvchenkova; Isam Abdullah; John Emyr Macdonald; Martin Elliott; Thomas D. Anthopoulos; Yen-Hung Lin; Petar Igić; Karol Kalna; Richard J. Cobley

ACS Applied Materials & Interfaces, Volume: 8, Issue: 38, Pages: 25631 - 25636

Swansea University Author: Igic, Petar

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DOI (Published version): 10.1021/acsami.6b10332

Abstract

The channel width-to-length ratio is an important transistor parameter for integrated circuit design. Contact diffusion into the channel during fabrication or operation alters the channel width and this important parameter. A novel methodology combining atomic force microscopy and scanning Kelvin pr...

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Published in: ACS Applied Materials & Interfaces
ISSN: 1944-8244 1944-8252
Published: 2016
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Abstract: The channel width-to-length ratio is an important transistor parameter for integrated circuit design. Contact diffusion into the channel during fabrication or operation alters the channel width and this important parameter. A novel methodology combining atomic force microscopy and scanning Kelvin probe microscopy (SKPM) with self-consistent modeling is developed for the nondestructive detection of contact diffusion on active devices. Scans of the surface potential are modeled using physically based Technology Computer Aided Design (TCAD) simulations when the transistor terminals are grounded and under biased conditions. The simulations also incorporate the tip geometry to investigate its effect on the measurements due to electrostatic tip–sample interactions. The method is particularly useful for semiconductor– and metal–semiconductor interfaces where the potential contrast resulting from dopant diffusion is below that usually detectable with scanning probe microscopy.
Item Description: Gold OA being applied for.
College: College of Engineering
Issue: 38
Start Page: 25631
End Page: 25636