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Nondestructive Method for Mapping Metal Contact Diffusion in In2O3Thin-Film Transistors / Olga Kryvchenkova; Isam Abdullah; John Emyr Macdonald; Martin Elliott; Thomas D. Anthopoulos; Yen-Hung Lin; Petar Igić; Karol Kalna; Richard J. Cobley

ACS Applied Materials & Interfaces, Volume: 8, Issue: 38, Pages: 25631 - 25636

Swansea University Author: Igic, Petar

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DOI (Published version): 10.1021/acsami.6b10332

Abstract

The channel width-to-length ratio is an important transistor parameter for integrated circuit design. Contact diffusion into the channel during fabrication or operation alters the channel width and this important parameter. A novel methodology combining atomic force microscopy and scanning Kelvin pr...

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Published in: ACS Applied Materials & Interfaces
ISSN: 1944-8244 1944-8252
Published: 2016
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URI: https://cronfa.swan.ac.uk/Record/cronfa30082
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fullrecord <?xml version="1.0"?><rfc1807><datestamp>2018-05-11T08:30:18Z</datestamp><bib-version>v2</bib-version><id>30082</id><entry>2016-09-16</entry><title>Nondestructive Method for Mapping Metal Contact Diffusion in In2O3Thin-Film Transistors</title><alternativeTitle></alternativeTitle><author>Petar Igic</author><firstname>Petar</firstname><surname>Igic</surname><active>true</active><ORCID>0000-0001-8150-8815</ORCID><ethesisStudent>false</ethesisStudent><sid>e085acc259a367abc89338346a150186</sid><email>ba9c63ccad27cc72e3246f453bf4357b</email><emailaddr>1JRL2Nx8X9ZHRZGkX/gYfxbHhpNGhK+ZEf+BVPcHSeI=</emailaddr><date>2016-09-16</date><deptcode>EEN</deptcode><abstract>The channel width-to-length ratio is an important transistor parameter for integrated circuit design. Contact diffusion into the channel during fabrication or operation alters the channel width and this important parameter. A novel methodology combining atomic force microscopy and scanning Kelvin probe microscopy (SKPM) with self-consistent modeling is developed for the nondestructive detection of contact diffusion on active devices. Scans of the surface potential are modeled using physically based Technology Computer Aided Design (TCAD) simulations when the transistor terminals are grounded and under biased conditions. The simulations also incorporate the tip geometry to investigate its effect on the measurements due to electrostatic tip&#x2013;sample interactions. The method is particularly useful for semiconductor&#x2013; and metal&#x2013;semiconductor interfaces where the potential contrast resulting from dopant diffusion is below that usually detectable with scanning probe microscopy.</abstract><type>Journal article</type><journal>ACS Applied Materials &amp; Interfaces</journal><volume>8</volume><journalNumber>38</journalNumber><paginationStart>25631</paginationStart><paginationEnd>25636</paginationEnd><publisher></publisher><placeOfPublication/><isbnPrint/><isbnElectronic/><issnPrint>1944-8244</issnPrint><issnElectronic>1944-8252</issnElectronic><keywords></keywords><publishedDay>0</publishedDay><publishedMonth>0</publishedMonth><publishedYear>2016</publishedYear><publishedDate>2016-01-01</publishedDate><doi>10.1021/acsami.6b10332</doi><url></url><notes>Gold OA being applied for.</notes><college>College of Engineering</college><department>Engineering</department><CollegeCode>CENG</CollegeCode><DepartmentCode>EEN</DepartmentCode><institution/><researchGroup>None</researchGroup><supervisor/><sponsorsfunders/><grantnumber/><degreelevel/><degreename>None</degreename><lastEdited>2018-05-11T08:30:18Z</lastEdited><Created>2016-09-16T09:39:23Z</Created><path><level id="1">College of Engineering</level><level id="2">Engineering</level></path><authors><author><firstname>Olga</firstname><surname>Kryvchenkova</surname><orcid/><order>1</order></author><author><firstname>Isam</firstname><surname>Abdullah</surname><orcid/><order>2</order></author><author><firstname>John Emyr</firstname><surname>Macdonald</surname><orcid/><order>3</order></author><author><firstname>Martin</firstname><surname>Elliott</surname><orcid/><order>4</order></author><author><firstname>Thomas D.</firstname><surname>Anthopoulos</surname><orcid/><order>5</order></author><author><firstname>Yen-Hung</firstname><surname>Lin</surname><orcid/><order>6</order></author><author><firstname>Petar</firstname><surname>Igi&#x107;</surname><orcid/><order>7</order></author><author><firstname>Karol</firstname><surname>Kalna</surname><orcid/><order>8</order></author><author><firstname>Richard J.</firstname><surname>Cobley</surname><orcid/><order>9</order></author></authors><documents><document><filename>0030082-07022017132742.pdf</filename><originalFilename>kryvchenkova2016v3.pdf</originalFilename><uploaded>2017-02-07T13:27:42Z</uploaded><type>Output</type><contentLength>1947498</contentLength><contentType>application/pdf</contentType><version>VoR</version><cronfaStatus>true</cronfaStatus><action>Published to Cronfa</action><actionDate>07/02/2017</actionDate><embargoDate>2017-02-07T00:00:00</embargoDate><documentNotes/><copyrightCorrect>false</copyrightCorrect><language/></document></documents></rfc1807>
spelling 2018-05-11T08:30:18Z v2 30082 2016-09-16 Nondestructive Method for Mapping Metal Contact Diffusion in In2O3Thin-Film Transistors Petar Igic Petar Igic true 0000-0001-8150-8815 false e085acc259a367abc89338346a150186 ba9c63ccad27cc72e3246f453bf4357b 1JRL2Nx8X9ZHRZGkX/gYfxbHhpNGhK+ZEf+BVPcHSeI= 2016-09-16 EEN The channel width-to-length ratio is an important transistor parameter for integrated circuit design. Contact diffusion into the channel during fabrication or operation alters the channel width and this important parameter. A novel methodology combining atomic force microscopy and scanning Kelvin probe microscopy (SKPM) with self-consistent modeling is developed for the nondestructive detection of contact diffusion on active devices. Scans of the surface potential are modeled using physically based Technology Computer Aided Design (TCAD) simulations when the transistor terminals are grounded and under biased conditions. The simulations also incorporate the tip geometry to investigate its effect on the measurements due to electrostatic tip–sample interactions. The method is particularly useful for semiconductor– and metal–semiconductor interfaces where the potential contrast resulting from dopant diffusion is below that usually detectable with scanning probe microscopy. Journal article ACS Applied Materials & Interfaces 8 38 25631 25636 1944-8244 1944-8252 0 0 2016 2016-01-01 10.1021/acsami.6b10332 Gold OA being applied for. College of Engineering Engineering CENG EEN None None 2018-05-11T08:30:18Z 2016-09-16T09:39:23Z College of Engineering Engineering Olga Kryvchenkova 1 Isam Abdullah 2 John Emyr Macdonald 3 Martin Elliott 4 Thomas D. Anthopoulos 5 Yen-Hung Lin 6 Petar Igić 7 Karol Kalna 8 Richard J. Cobley 9 0030082-07022017132742.pdf kryvchenkova2016v3.pdf 2017-02-07T13:27:42Z Output 1947498 application/pdf VoR true Published to Cronfa 07/02/2017 2017-02-07T00:00:00 false
title Nondestructive Method for Mapping Metal Contact Diffusion in In2O3Thin-Film Transistors
spellingShingle Nondestructive Method for Mapping Metal Contact Diffusion in In2O3Thin-Film Transistors
Igic, Petar
title_short Nondestructive Method for Mapping Metal Contact Diffusion in In2O3Thin-Film Transistors
title_full Nondestructive Method for Mapping Metal Contact Diffusion in In2O3Thin-Film Transistors
title_fullStr Nondestructive Method for Mapping Metal Contact Diffusion in In2O3Thin-Film Transistors
title_full_unstemmed Nondestructive Method for Mapping Metal Contact Diffusion in In2O3Thin-Film Transistors
title_sort Nondestructive Method for Mapping Metal Contact Diffusion in In2O3Thin-Film Transistors
author_id_str_mv e085acc259a367abc89338346a150186
author_id_fullname_str_mv e085acc259a367abc89338346a150186_***_Igic, Petar
author Igic, Petar
author2 Olga Kryvchenkova
Isam Abdullah
John Emyr Macdonald
Martin Elliott
Thomas D. Anthopoulos
Yen-Hung Lin
Petar Igić
Karol Kalna
Richard J. Cobley
format Journal article
container_title ACS Applied Materials & Interfaces
container_volume 8
container_issue 38
container_start_page 25631
publishDate 2016
institution Swansea University
issn 1944-8244
1944-8252
doi_str_mv 10.1021/acsami.6b10332
college_str College of Engineering
hierarchytype
hierarchy_top_id collegeofengineering
hierarchy_top_title College of Engineering
hierarchy_parent_id collegeofengineering
hierarchy_parent_title College of Engineering
department_str Engineering{{{_:::_}}}College of Engineering{{{_:::_}}}Engineering
document_store_str 1
active_str 1
description The channel width-to-length ratio is an important transistor parameter for integrated circuit design. Contact diffusion into the channel during fabrication or operation alters the channel width and this important parameter. A novel methodology combining atomic force microscopy and scanning Kelvin probe microscopy (SKPM) with self-consistent modeling is developed for the nondestructive detection of contact diffusion on active devices. Scans of the surface potential are modeled using physically based Technology Computer Aided Design (TCAD) simulations when the transistor terminals are grounded and under biased conditions. The simulations also incorporate the tip geometry to investigate its effect on the measurements due to electrostatic tip–sample interactions. The method is particularly useful for semiconductor– and metal–semiconductor interfaces where the potential contrast resulting from dopant diffusion is below that usually detectable with scanning probe microscopy.
published_date 2016-01-01T12:35:58Z
_version_ 1631151570383011840
score 10.801898