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Scaling/LER Study of Si GAA Nanowire FET using 3D Finite Element Monte Carlo Simulations / Muhammad A. Elmessary; Daniel Nagy; Manuel Aldegunde; Natalia Seoane; Guillermo Indalecio; Jari Lindberg; Wulf Dettmer; Djordje Perić; Antonio J. García-Loureiro; Karol Kalna

Solid-State Electronics, Volume: 128, Pages: 17 - 24

Swansea University Author: Kalna, Karol

Abstract

3D Finite Element (FE) Monte Carlo (MC) simulation toolbox incorporating 2D Schrödinger equation quantum corrections is employed to simulate ID-VG characteristics of a 22 nm gate length gate-all-around (GAA) Si nanowire (NW) FET demonstrating an excellent agreement against experimental data at both...

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Published in: Solid-State Electronics
ISSN: 0038-1101
Published: 2016 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS) 2017
Online Access: Check full text

URI: https://cronfa.swan.ac.uk/Record/cronfa30751
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Abstract: 3D Finite Element (FE) Monte Carlo (MC) simulation toolbox incorporating 2D Schrödinger equation quantum corrections is employed to simulate ID-VG characteristics of a 22 nm gate length gate-all-around (GAA) Si nanowire (NW) FET demonstrating an excellent agreement against experimental data at both low and high drain biases. We then scale the Si GAA NW according to the ITRS specifications to a gate length of 10 nm predicting that the NW FET will deliver the required on-current of above 1mA/μm and a superior electrostatic integrity with a nearly ideal sub-threshold slope of 68 mV/dec and a DIBL of 39 mV/V. In addition, we use a calibrated 3D FE quantum corrected drift-diffusion (DD) toolbox to investigate the effects of NW line-edge roughness (LER) induced variability on the sub-threshold characteristics (threshold voltage (VT), OFF-current (IOFF), sub-threshold slope (SS) and drain-induced-barrier-lowering (DIBL)) for the 22 nm and 10 nm gate length GAA NW FETs at low and high drain biases. We simulate variability with two LER correlation lengths (CL=20 nm and 10 nm) and three root mean square values (RMS=0.6,0.7 and 0.85 nm).
College: College of Engineering
Start Page: 17
End Page: 24