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Monte Carlo simulations of spin transport in a strained nanoscale InGaAs field effect transistor / B. Thorpe; K. Kalna; F. C. Langbein; S. Schirmer

Journal of Applied Physics, Volume: 122, Issue: 22, Start page: 223903

Swansea University Author: Kalna, Karol

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DOI (Published version): 10.1063/1.4994148

Abstract

Spin-based logic devices could operate at a very high speed with a very low energy consumption and hold significant promise for quantum information processing and metrology. We develop a spintronic device simulator by combining an in-house developed, experimentally verified, ensemble self-consistent...

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Published in: Journal of Applied Physics
ISSN: 0021-8979 1089-7550
Published: 2017
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URI: https://cronfa.swan.ac.uk/Record/cronfa37803
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Abstract: Spin-based logic devices could operate at a very high speed with a very low energy consumption and hold significant promise for quantum information processing and metrology. We develop a spintronic device simulator by combining an in-house developed, experimentally verified, ensemble self-consistent Monte Carlo device simulator with spin transport based on a Bloch equation model and a spin–orbit interaction Hamiltonian accounting for Dresselhaus and Rashba couplings. It is employed to simulate a spin field effect transistor operating under externally applied voltages on a gate and a drain. In particular, we simulate electron spin transport in a 25 nm gate length In0.7Ga0.3As metal-oxide-semiconductor field-effect transistor with a CMOS compatible architecture. We observe a non-uniform decay of the net magnetization between the source and the gate and a magnetization recovery effect due to spin refocusing induced by a high electric field between the gate and the drain. We demonstrate a coherent control of the polarization vector of the drain current via the source-drain and gate voltages, and show that the magnetization of the drain current can be increased twofold by the strain induced into the channel.
Keywords: Monte Carlo methods, Spin orbit interactions, Electronic devices, Coherent control, Metrology
College: College of Engineering
Issue: 22
Start Page: 223903