Guo, Y., Chen, J., Zhang, Z., & Robertson, J. (2019). Schottky barrier height at metal/ZnO interface: A first-principles study. Microelectronic Engineering, 216, p. 111056. doi:10.1016/j.mee.2019.111056
Chicago Style CitationGuo, Yuzheng, Jiaqi Chen, Zhaofu Zhang, and John Robertson. "Schottky Barrier Height At Metal/ZnO Interface: A First-principles Study." Microelectronic Engineering 216 (2019): 111056.
MLA CitationGuo, Yuzheng, Jiaqi Chen, Zhaofu Zhang, and John Robertson. "Schottky Barrier Height At Metal/ZnO Interface: A First-principles Study." Microelectronic Engineering 216 (2019): 111056.
Warning: These citations may not always be 100% accurate.