Guo, Y., Zhang, Z., & Robertson, J. (2020). Termination-dependence of Fermi level pinning at rare-earth arsenide/GaAs interfaces. Applied Physics Letters, 116(25), p. 251602. doi:10.1063/5.0007479

Guo, Yuzheng, Zhaofu Zhang, and John Robertson. "Termination-dependence of Fermi Level Pinning At Rare-earth Arsenide/GaAs Interfaces." Applied Physics Letters 116, no. 25 (2020): 251602.

Guo, Yuzheng, Zhaofu Zhang, and John Robertson. "Termination-dependence of Fermi Level Pinning At Rare-earth Arsenide/GaAs Interfaces." Applied Physics Letters 116.25 (2020): 251602.