Journal article 246 views
An advanced physics-based sub-circuit model of a punch-trough insulated gate bipolar transistor / Petar Igic
International Journal of Electronics
Swansea University Author: Igic, Petar
Full text not available from this repository: check for access using links below.
DOI (Published version): 10.1080/00207210902847413
An advanced physics-based sub-circuit model of a punch-trough insulated gate bipolar transistor
|Published in:||International Journal of Electronics|
No Tags, Be the first to tag this record!
College of Engineering