Journal article 246 views
An advanced physics-based sub-circuit model of a punch-trough insulated gate bipolar transistor / Petar Igic
International Journal of Electronics
Swansea University Author: Igic, Petar
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DOI (Published version): 10.1080/00207210902847413
Abstract
An advanced physics-based sub-circuit model of a punch-trough insulated gate bipolar transistor
| Published in: | International Journal of Electronics |
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| Published: |
2009
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| URI: | https://cronfa.swan.ac.uk/Record/cronfa5650 |
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| College: |
College of Engineering |
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