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An advanced physics-based sub-circuit model of a punch-trough insulated gate bipolar transistor / Petar Igic

International Journal of Electronics

Swansea University Author: Igic, Petar

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DOI (Published version): 10.1080/00207210902847413

Published in: International Journal of Electronics
Published: 2009
URI: https://cronfa.swan.ac.uk/Record/cronfa5650
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College: College of Engineering