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An advanced physics-based sub-circuit model of a punch-trough insulated gate bipolar transistor / Petar Igic
International Journal of Electronics
Swansea University Author: Igic, Petar
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DOI (Published version): 10.1080/00207210902847413
An advanced physics-based sub-circuit model of a punch-trough insulated gate bipolar transistor
|Published in:||International Journal of Electronics|
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