Journal article 1039 views 166 downloads
Optical driven electromechanical transistor based on tunneling effect
Leisheng Jin,
Lijie Li 
Optics Letters, Volume: 40, Issue: 8, Start page: 1798
Swansea University Author:
Lijie Li
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DOI (Published version): 10.1364/OL.40.001798
Abstract
A new electromechanical transistor based on an optical driven vibrational ring structure has been postulated. In the device, optical power excites the ring structure to vibrate, which acts as the shuttle transporting electrons from one electrode to the other forming the transistor. The electrical cu...
| Published in: | Optics Letters |
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| Published: |
2015
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| URI: | https://cronfa.swan.ac.uk/Record/cronfa20751 |
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| Abstract: |
A new electromechanical transistor based on an optical driven vibrational ring structure has been postulated. In the device, optical power excites the ring structure to vibrate, which acts as the shuttle transporting electrons from one electrode to the other forming the transistor. The electrical current of the transistor is adjusted by the optical power. Coupled opto-electro-mechanical simulation has been performed. It is shown from the dynamic analysis that the stable working range of the transistor is much wider than that of the optical wave inside the cavity, i.e., the optical resonance enters nonperiodic states while the mechanical vibration of the ring is still periodic. |
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| College: |
Faculty of Science and Engineering |
| Issue: |
8 |
| Start Page: |
1798 |