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Photoresponse of polyaniline-functionalized graphene quantum dots / Vincent, Teng

Nanoscale, Volume: 7, Issue: 12, Pages: 5338 - 5343

Swansea University Author: Vincent, Teng

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DOI (Published version): 10.1039/c4nr07565j

Abstract

Polyaniline-functionalized graphene quantum dots (PANI-GQD) and pristine graphene quantum dots (GQDs) were utilized for optoelectronic devices. The PANI-GQD based photodetector exhibited higher responsivity which is about an order of magnitude at 405 nm and 7 folds at 532 nm as compared to GQD-based...

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Published in: Nanoscale
ISSN: 2040-3364 2040-3372
Published: 2015
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URI: https://cronfa.swan.ac.uk/Record/cronfa21240
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spelling 2019-06-04T16:19:55.6026709 v2 21240 2015-05-08 Photoresponse of polyaniline-functionalized graphene quantum dots 98f529f56798da1ba3e6e93d2817c114 0000-0003-4325-8573 Vincent Teng Vincent Teng true false 2015-05-08 EEN Polyaniline-functionalized graphene quantum dots (PANI-GQD) and pristine graphene quantum dots (GQDs) were utilized for optoelectronic devices. The PANI-GQD based photodetector exhibited higher responsivity which is about an order of magnitude at 405 nm and 7 folds at 532 nm as compared to GQD-based photodetectors. The improved photoresponse is attributed to the enhanced interconnection of GQD by island-like polymer matrices, which facilitate carrier transport within the polymer matrices. The optically tunable current–voltage (I–V) hysteresis of PANI-GQD was also demonstrated. The hysteresis magnifies progressively with light intensity at a scan range of ±1 V. Both GQD and PANI-GQD devices change from positive to negative photocurrent when the bias reaches 4 V. Photogenerated carriers are excited to the trapping states in GQDs with increased bias. The trapped charges interact with charges injected from the electrodes which results in a net decrease of free charge carriers and a negative photocurrent. The photocurrent switching phenomenon in GQD and PANI-GQD devices may open up novel applications in optoelectronics. Journal Article Nanoscale 7 12 5338 5343 2040-3364 2040-3372 16 2 2015 2015-02-16 10.1039/c4nr07565j http://pubs.rsc.org/en/Content/ArticleLanding/2015/NR/c4nr07565j#!divAbstract COLLEGE NANME Engineering COLLEGE CODE EEN Swansea University 2019-06-04T16:19:55.6026709 2015-05-08T09:49:00.5437999 College of Engineering Engineering Sin Ki Lai 1 Chi Man Luk 2 Libin Tang 3 Kar Seng Teng 4 Shu Ping Lau 5 Vincent Teng 0000-0003-4325-8573 6 0021240-08052015095101.pdf PANI-GQD__devices__revisedv2.pdf 2015-05-08T09:51:01.8670000 Output 926865 application/pdf Accepted Manuscript true 2016-02-17T00:00:00.0000000 true
title Photoresponse of polyaniline-functionalized graphene quantum dots
spellingShingle Photoresponse of polyaniline-functionalized graphene quantum dots
Vincent, Teng
title_short Photoresponse of polyaniline-functionalized graphene quantum dots
title_full Photoresponse of polyaniline-functionalized graphene quantum dots
title_fullStr Photoresponse of polyaniline-functionalized graphene quantum dots
title_full_unstemmed Photoresponse of polyaniline-functionalized graphene quantum dots
title_sort Photoresponse of polyaniline-functionalized graphene quantum dots
author_id_str_mv 98f529f56798da1ba3e6e93d2817c114
author_id_fullname_str_mv 98f529f56798da1ba3e6e93d2817c114_***_Vincent, Teng
author Vincent, Teng
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container_title Nanoscale
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container_start_page 5338
publishDate 2015
institution Swansea University
issn 2040-3364
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doi_str_mv 10.1039/c4nr07565j
college_str College of Engineering
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url http://pubs.rsc.org/en/Content/ArticleLanding/2015/NR/c4nr07565j#!divAbstract
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description Polyaniline-functionalized graphene quantum dots (PANI-GQD) and pristine graphene quantum dots (GQDs) were utilized for optoelectronic devices. The PANI-GQD based photodetector exhibited higher responsivity which is about an order of magnitude at 405 nm and 7 folds at 532 nm as compared to GQD-based photodetectors. The improved photoresponse is attributed to the enhanced interconnection of GQD by island-like polymer matrices, which facilitate carrier transport within the polymer matrices. The optically tunable current–voltage (I–V) hysteresis of PANI-GQD was also demonstrated. The hysteresis magnifies progressively with light intensity at a scan range of ±1 V. Both GQD and PANI-GQD devices change from positive to negative photocurrent when the bias reaches 4 V. Photogenerated carriers are excited to the trapping states in GQDs with increased bias. The trapped charges interact with charges injected from the electrodes which results in a net decrease of free charge carriers and a negative photocurrent. The photocurrent switching phenomenon in GQD and PANI-GQD devices may open up novel applications in optoelectronics.
published_date 2015-02-16T03:36:59Z
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