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Quantum simulation of ZnO nanowire piezotronics

Leisheng Jin, Lijie Li Orcid Logo

Nano Energy, Volume: 15, Pages: 776 - 781

Swansea University Author: Lijie Li Orcid Logo

Abstract

We address the problem of quantum transport in a nanometre sized two-terminal ZnO device subject to an external strain. The two junctions formed between the electrodes and the ZnO are generally taken as Ohmic and Schottky type, respectively. Unlike the conventional treatment to the piezopotential, w...

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Published in: Nano Energy
ISSN: 2211-2855
Published: 2015
Online Access: Check full text

URI: https://cronfa.swan.ac.uk/Record/cronfa22095
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Abstract: We address the problem of quantum transport in a nanometre sized two-terminal ZnO device subject to an external strain. The two junctions formed between the electrodes and the ZnO are generally taken as Ohmic and Schottky type, respectively. Unlike the conventional treatment to the piezopotential, we treat it as a potential barrier which is only induced at the interfaces. By calculating the transmission coefficient of a Fermi-energized electron that flows from one end to the other, it is found that the piezopotential has the effect of modulating the voltage threshold of the current flowing. The calculations are based on the quantum scattering theory. The work is believed to pave the way for investigating the quantum piezotronics.
College: College of Engineering
Start Page: 776
End Page: 781