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In-Situ Fabrication of a Self-Aligned Selective Emitter Silicon Solar Cell Using the Gold Top Contacts To Facilitate the Synthesis of a Nanostructured Black Silicon Antireflective Layer Instead of an External Metal Nanoparticle Ca...
ACS Applied Materials & Interfaces, Volume: 7, Issue: 22, Pages: 11802 - 11814
Swansea University Author:
Andrew Barron
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DOI (Published version): 10.1021/acsami.5b01008
Abstract
Silicon solar cells with nanopore-type black silicon antireflection layers and self-aligned selective emitter are reported in which the b-Si structure is prepared without the traditional addition of a catalyst. The contact-assisted chemical etching (CACE) method is reported for the first time, in wh...
| Published in: | ACS Applied Materials & Interfaces |
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| Published: |
2015
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| Online Access: |
http://pubs.acs.org/doi/abs/10.1021/acsami.5b01008 |
| URI: | https://cronfa.swan.ac.uk/Record/cronfa22193 |
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| Abstract: |
Silicon solar cells with nanopore-type black silicon antireflection layers and self-aligned selective emitter are reported in which the b-Si structure is prepared without the traditional addition of a catalyst. The contact-assisted chemical etching (CACE) method is reported for the first time, in which the metal top contacts on silicon solar cell surfaces function as the catalysts for b-Si fabrication and the whole etching process can be done in minutes at room temperature. The CACE method is based on the metal-assisted chemical etching solution but without or metal precursor in the Si etchant (HF:H2O2:H2O), and the Au top contacts, or catalysts, are not removed from the solar cell surface after the etching. The effects of composition, concentration and time on the b-Si morphology, surface reflectivity, and solar cell efficiency have been investigated. Higher [HF] and [H2O2] with longer etching time cause collapse of the b-Si nanoporous structure and penetration of the p–n junctions, which are detrimental to the solar cell efficiency. The b-Si solar cell fabricated with the HF:H2O2:H2O volume ratio of 3:3:20 and a 3 min etch time shows the highest efficiency 8.99% along with a decrease of reflectivity from 36.1% to 12.6% compared to that of the nonetched Si solar cell. |
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| College: |
Faculty of Science and Engineering |
| Issue: |
22 |
| Start Page: |
11802 |
| End Page: |
11814 |