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The measured dependence of the lateral ambipolar diffusion length on carrier injection-level in Stranski-Krastanov quantum dot devices

D. Naidu, P.M. Smowton, H.D. Summers, Huw Summers Orcid Logo

Journal of Applied Physics, Volume: 108, Issue: 4, Start page: 043108

Swansea University Author: Huw Summers Orcid Logo

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DOI (Published version): 10.1063/1.3471812

Published in: Journal of Applied Physics
ISSN: 00218979
Published: 2010
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URI: https://cronfa.swan.ac.uk/Record/cronfa25319
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Item Description: @article summers2010,title = The measured dependence of the lateral ambipolar diffusion length on carrier injection-level in Stranski-Krastanov quantum dot devices,journal = Journal of Applied Physics,year = 2010,volume = 108,number = 4,author = Naidu, D. and Smowton, P.M. and Summers, H.D.
College: College of Engineering
Issue: 4
Start Page: 043108