Journal article 857 views
The measured dependence of the lateral ambipolar diffusion length on carrier injection-level in Stranski-Krastanov quantum dot devices
Journal of Applied Physics, Volume: 108, Issue: 4, Start page: 043108
Swansea University Author:
Huw Summers
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DOI (Published version): 10.1063/1.3471812
Abstract
The measured dependence of the lateral ambipolar diffusion length on carrier injection-level in Stranski-Krastanov quantum dot devices
Published in: | Journal of Applied Physics |
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ISSN: | 00218979 |
Published: |
2010
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Online Access: |
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URI: | https://cronfa.swan.ac.uk/Record/cronfa25319 |
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Item Description: |
@article summers2010,title = The measured dependence of the lateral ambipolar diffusion length on carrier injection-level in Stranski-Krastanov quantum dot devices,journal = Journal of Applied Physics,year = 2010,volume = 108,number = 4,author = Naidu, D. and Smowton, P.M. and Summers, H.D. |
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College: |
Faculty of Science and Engineering |
Issue: |
4 |
Start Page: |
043108 |