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Threshold current of 670-nm AlGaInP strained quantum well lasers

P.M. Smowton, H.D. Summers, P. Rees, P. Blood, Paul Rees Orcid Logo, Huw Summers Orcid Logo

IEEE Photonics Technology Letters, Volume: 6, Issue: 8, Pages: 910 - 912

Swansea University Authors: Paul Rees Orcid Logo, Huw Summers Orcid Logo

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DOI (Published version): 10.1109/68.313049

Published in: IEEE Photonics Technology Letters
ISSN: 1041-1135 1941-0174
Published: 1994
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URI: https://cronfa.swan.ac.uk/Record/cronfa25421
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first_indexed 2016-01-06T01:57:43Z
last_indexed 2018-02-09T05:06:17Z
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spelling 2016-01-05T13:36:37.3926147 v2 25421 2016-01-05 Threshold current of 670-nm AlGaInP strained quantum well lasers 537a2fe031a796a3bde99679ee8c24f5 0000-0002-7715-6914 Paul Rees Paul Rees true false a61c15e220837ebfa52648c143769427 0000-0002-0898-5612 Huw Summers Huw Summers true false 2016-01-05 MEDE Journal Article IEEE Photonics Technology Letters 6 8 910 912 1041-1135 1941-0174 31 12 1994 1994-12-31 10.1109/68.313049 http://www.scopus.com/inward/record.url?eid=2-s2.0-0028482046&amp;partnerID=MN8TOARS @article summers1994,title = Threshold current of 670-nm AlGaInP strained quantum well lasers,journal = IEEE Photonics Technology Letters,year = 1994,volume = 6,number = 8,pages = 910-912,author = Smowton, P.M. and Summers, H.D. and Rees, P. and Blood, P. COLLEGE NANME Biomedical Engineering COLLEGE CODE MEDE Swansea University 2016-01-05T13:36:37.3926147 2016-01-05T13:36:37.1898134 Faculty of Science and Engineering School of Engineering and Applied Sciences - Biomedical Engineering P.M. Smowton 1 H.D. Summers 2 P. Rees 3 P. Blood 4 Paul Rees 0000-0002-7715-6914 5 Huw Summers 0000-0002-0898-5612 6
title Threshold current of 670-nm AlGaInP strained quantum well lasers
spellingShingle Threshold current of 670-nm AlGaInP strained quantum well lasers
Paul Rees
Huw Summers
title_short Threshold current of 670-nm AlGaInP strained quantum well lasers
title_full Threshold current of 670-nm AlGaInP strained quantum well lasers
title_fullStr Threshold current of 670-nm AlGaInP strained quantum well lasers
title_full_unstemmed Threshold current of 670-nm AlGaInP strained quantum well lasers
title_sort Threshold current of 670-nm AlGaInP strained quantum well lasers
author_id_str_mv 537a2fe031a796a3bde99679ee8c24f5
a61c15e220837ebfa52648c143769427
author_id_fullname_str_mv 537a2fe031a796a3bde99679ee8c24f5_***_Paul Rees
a61c15e220837ebfa52648c143769427_***_Huw Summers
author Paul Rees
Huw Summers
author2 P.M. Smowton
H.D. Summers
P. Rees
P. Blood
Paul Rees
Huw Summers
format Journal article
container_title IEEE Photonics Technology Letters
container_volume 6
container_issue 8
container_start_page 910
publishDate 1994
institution Swansea University
issn 1041-1135
1941-0174
doi_str_mv 10.1109/68.313049
college_str Faculty of Science and Engineering
hierarchytype
hierarchy_top_id facultyofscienceandengineering
hierarchy_top_title Faculty of Science and Engineering
hierarchy_parent_id facultyofscienceandengineering
hierarchy_parent_title Faculty of Science and Engineering
department_str School of Engineering and Applied Sciences - Biomedical Engineering{{{_:::_}}}Faculty of Science and Engineering{{{_:::_}}}School of Engineering and Applied Sciences - Biomedical Engineering
url http://www.scopus.com/inward/record.url?eid=2-s2.0-0028482046&amp;partnerID=MN8TOARS
document_store_str 0
active_str 0
published_date 1994-12-31T03:30:23Z
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score 11.016235

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