Kalna, K., Seoane, N., Indalecio, G., Aldegunde, M., Nagy, D., Elmessary, M. A., & Garcia-Loureiro, A. J. (2016). Comparison of Fin-Edge Roughness and Metal Grain Work Function Variability in InGaAs and Si FinFETs. IEEE Transactions on Electron Devices, 63(3), pp. 1209-1216. doi:10.1109/TED.2016.2516921
Chicago Style CitationKalna, Karol, Natalia Seoane, Guillermo Indalecio, Manuel Aldegunde, Daniel Nagy, Muhammad A. Elmessary, and Antonio J. Garcia-Loureiro. "Comparison of Fin-Edge Roughness and Metal Grain Work Function Variability in InGaAs and Si FinFETs." IEEE Transactions On Electron Devices 63, no. 3 (2016): 1209-1216.
MLA CitationKalna, Karol, et al. "Comparison of Fin-Edge Roughness and Metal Grain Work Function Variability in InGaAs and Si FinFETs." IEEE Transactions On Electron Devices 63.3 (2016): 1209-1216.