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Comparison of Fin-Edge Roughness and Metal Grain Work Function Variability in InGaAs and Si FinFETs / Karol, Kalna

IEEE Transactions on Electron Devices, Volume: 63, Issue: 3, Pages: 1209 - 1216

Swansea University Author: Karol, Kalna

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Abstract

The fin-edge roughness and the TiN metal grain work function-induced variability affecting device characteristics are studied and compared between a 10.4-nm gate length In0.53Ga0.47As FinFET and a 10.7-nm gate length Si FinFET. We have analysed the impact of variability by looking on five figures of...

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Published in: IEEE Transactions on Electron Devices
ISSN: 0018-9383 1557-9646
Published: 2016
Online Access: Check full text

URI: https://cronfa.swan.ac.uk/Record/cronfa27207
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Abstract: The fin-edge roughness and the TiN metal grain work function-induced variability affecting device characteristics are studied and compared between a 10.4-nm gate length In0.53Ga0.47As FinFET and a 10.7-nm gate length Si FinFET. We have analysed the impact of variability by looking on five figures of merit (threshold voltage, sub-threshold slope, off-current, DIBL, and on-current) using the two state-of-the-art in-house-build 3-D simulation tools based on the finite-element method. Quantum-corrected 3-D drift-diffusion simulations are employed for variability studies in the sub-threshold region while, in the ON-rwillegion, we use quantum-corrected 3-D ensemble Monte Carlo simulations. The In0.53Ga0.47As FinFET is more resistant to the fin-edge roughness and metal grain work function variability in the sub-threshold compared with the Si FinFET due to a stronger quantum carrier confinement present in the In0.53Ga0.47As channel. However, the ON-current variability is between 1.1 and 2.2 times larger for the In0.53Ga0.47As FinFET than for the Si transistor, respectively.will
College: College of Engineering
Issue: 3
Start Page: 1209
End Page: 1216