Journal article 1160 views
Comparison of Fin-Edge Roughness and Metal Grain Work Function Variability in InGaAs and Si FinFETs
IEEE Transactions on Electron Devices, Volume: 63, Issue: 3, Pages: 1209 - 1216
Swansea University Author:
Karol Kalna
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DOI (Published version): 10.1109/TED.2016.2516921
Abstract
The fin-edge roughness and the TiN metal grain work function-induced variability affecting device characteristics are studied and compared between a 10.4-nm gate length In0.53Ga0.47As FinFET and a 10.7-nm gate length Si FinFET. We have analysed the impact of variability by looking on five figures of...
| Published in: | IEEE Transactions on Electron Devices |
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| ISSN: | 0018-9383 1557-9646 |
| Published: |
2016
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| Online Access: |
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| URI: | https://cronfa.swan.ac.uk/Record/cronfa27207 |
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| Abstract: |
The fin-edge roughness and the TiN metal grain work function-induced variability affecting device characteristics are studied and compared between a 10.4-nm gate length In0.53Ga0.47As FinFET and a 10.7-nm gate length Si FinFET. We have analysed the impact of variability by looking on five figures of merit (threshold voltage, sub-threshold slope, off-current, DIBL, and on-current) using the two state-of-the-art in-house-build 3-D simulation tools based on the finite-element method. Quantum-corrected 3-D drift-diffusion simulations are employed for variability studies in the sub-threshold region while, in the ON-rwillegion, we use quantum-corrected 3-D ensemble Monte Carlo simulations. The In0.53Ga0.47As FinFET is more resistant to the fin-edge roughness and metal grain work function variability in the sub-threshold compared with the Si FinFET due to a stronger quantum carrier confinement present in the In0.53Ga0.47As channel. However, the ON-current variability is between 1.1 and 2.2 times larger for the In0.53Ga0.47As FinFET than for the Si transistor, respectively.will |
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| College: |
Faculty of Science and Engineering |
| Issue: |
3 |
| Start Page: |
1209 |
| End Page: |
1216 |