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Comparison of Fin-Edge Roughness and Metal Grain Work Function Variability in InGaAs and Si FinFETs

Natalia Seoane, Guillermo Indalecio, Manuel Aldegunde, Daniel Nagy, Muhammad A. Elmessary, Antonio J. Garcia-Loureiro, Karol Kalna Orcid Logo

IEEE Transactions on Electron Devices, Volume: 63, Issue: 3, Pages: 1209 - 1216

Swansea University Author: Karol Kalna Orcid Logo

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DOI (Published version): 10.1109/TED.2016.2516921

Abstract

The fin-edge roughness and the TiN metal grain work function-induced variability affecting device characteristics are studied and compared between a 10.4-nm gate length In0.53Ga0.47As FinFET and a 10.7-nm gate length Si FinFET. We have analysed the impact of variability by looking on five figures of...

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Published in: IEEE Transactions on Electron Devices
ISSN: 0018-9383 1557-9646
Published: 2016
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URI: https://cronfa.swan.ac.uk/Record/cronfa27207
first_indexed 2016-04-20T01:11:01Z
last_indexed 2023-01-11T13:59:29Z
id cronfa27207
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spelling 2022-10-10T15:50:04.3513587 v2 27207 2016-04-19 Comparison of Fin-Edge Roughness and Metal Grain Work Function Variability in InGaAs and Si FinFETs 1329a42020e44fdd13de2f20d5143253 0000-0002-6333-9189 Karol Kalna Karol Kalna true false 2016-04-19 ACEM The fin-edge roughness and the TiN metal grain work function-induced variability affecting device characteristics are studied and compared between a 10.4-nm gate length In0.53Ga0.47As FinFET and a 10.7-nm gate length Si FinFET. We have analysed the impact of variability by looking on five figures of merit (threshold voltage, sub-threshold slope, off-current, DIBL, and on-current) using the two state-of-the-art in-house-build 3-D simulation tools based on the finite-element method. Quantum-corrected 3-D drift-diffusion simulations are employed for variability studies in the sub-threshold region while, in the ON-rwillegion, we use quantum-corrected 3-D ensemble Monte Carlo simulations. The In0.53Ga0.47As FinFET is more resistant to the fin-edge roughness and metal grain work function variability in the sub-threshold compared with the Si FinFET due to a stronger quantum carrier confinement present in the In0.53Ga0.47As channel. However, the ON-current variability is between 1.1 and 2.2 times larger for the In0.53Ga0.47As FinFET than for the Si transistor, respectively.will Journal Article IEEE Transactions on Electron Devices 63 3 1209 1216 0018-9383 1557-9646 31 3 2016 2016-03-31 10.1109/TED.2016.2516921 http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=7393821 COLLEGE NANME Aerospace, Civil, Electrical, and Mechanical Engineering COLLEGE CODE ACEM Swansea University EC, EPSRC 2022-10-10T15:50:04.3513587 2016-04-19T12:52:47.9770898 Faculty of Science and Engineering School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering Natalia Seoane 1 Guillermo Indalecio 2 Manuel Aldegunde 3 Daniel Nagy 4 Muhammad A. Elmessary 5 Antonio J. Garcia-Loureiro 6 Karol Kalna 0000-0002-6333-9189 7
title Comparison of Fin-Edge Roughness and Metal Grain Work Function Variability in InGaAs and Si FinFETs
spellingShingle Comparison of Fin-Edge Roughness and Metal Grain Work Function Variability in InGaAs and Si FinFETs
Karol Kalna
title_short Comparison of Fin-Edge Roughness and Metal Grain Work Function Variability in InGaAs and Si FinFETs
title_full Comparison of Fin-Edge Roughness and Metal Grain Work Function Variability in InGaAs and Si FinFETs
title_fullStr Comparison of Fin-Edge Roughness and Metal Grain Work Function Variability in InGaAs and Si FinFETs
title_full_unstemmed Comparison of Fin-Edge Roughness and Metal Grain Work Function Variability in InGaAs and Si FinFETs
title_sort Comparison of Fin-Edge Roughness and Metal Grain Work Function Variability in InGaAs and Si FinFETs
author_id_str_mv 1329a42020e44fdd13de2f20d5143253
author_id_fullname_str_mv 1329a42020e44fdd13de2f20d5143253_***_Karol Kalna
author Karol Kalna
author2 Natalia Seoane
Guillermo Indalecio
Manuel Aldegunde
Daniel Nagy
Muhammad A. Elmessary
Antonio J. Garcia-Loureiro
Karol Kalna
format Journal article
container_title IEEE Transactions on Electron Devices
container_volume 63
container_issue 3
container_start_page 1209
publishDate 2016
institution Swansea University
issn 0018-9383
1557-9646
doi_str_mv 10.1109/TED.2016.2516921
college_str Faculty of Science and Engineering
hierarchytype
hierarchy_top_id facultyofscienceandengineering
hierarchy_top_title Faculty of Science and Engineering
hierarchy_parent_id facultyofscienceandengineering
hierarchy_parent_title Faculty of Science and Engineering
department_str School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering{{{_:::_}}}Faculty of Science and Engineering{{{_:::_}}}School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering
url http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=7393821
document_store_str 0
active_str 0
description The fin-edge roughness and the TiN metal grain work function-induced variability affecting device characteristics are studied and compared between a 10.4-nm gate length In0.53Ga0.47As FinFET and a 10.7-nm gate length Si FinFET. We have analysed the impact of variability by looking on five figures of merit (threshold voltage, sub-threshold slope, off-current, DIBL, and on-current) using the two state-of-the-art in-house-build 3-D simulation tools based on the finite-element method. Quantum-corrected 3-D drift-diffusion simulations are employed for variability studies in the sub-threshold region while, in the ON-rwillegion, we use quantum-corrected 3-D ensemble Monte Carlo simulations. The In0.53Ga0.47As FinFET is more resistant to the fin-edge roughness and metal grain work function variability in the sub-threshold compared with the Si FinFET due to a stronger quantum carrier confinement present in the In0.53Ga0.47As channel. However, the ON-current variability is between 1.1 and 2.2 times larger for the In0.53Ga0.47As FinFET than for the Si transistor, respectively.will
published_date 2016-03-31T05:22:31Z
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score 11.08895

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