Journal article 1184 views
Random Dopant, Line-Edge Roughness, and Gate Workfunction Variability in a Nano InGaAs FinFET
Natalia Seoane,
Guillermo Indalecio,
Enrique Comesana,
Manuel Aldegunde,
Antonio J. Garcia-Loureiro,
Karol Kalna
IEEE Transactions on Electron Devices, Volume: 61, Issue: 2, Pages: 466 - 472
Swansea University Author:
Karol Kalna
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DOI (Published version): 10.1109/TED.2013.2294213
Abstract
Random Dopant, Line-Edge Roughness, and Gate Workfunction Variability in a Nano InGaAs FinFET
Published in: | IEEE Transactions on Electron Devices |
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Published: |
2014
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URI: | https://cronfa.swan.ac.uk/Record/cronfa21848 |
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College: |
Faculty of Science and Engineering |
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Issue: |
2 |
Start Page: |
466 |
End Page: |
472 |