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Random Dopant, Line-Edge Roughness, and Gate Workfunction Variability in a Nano InGaAs FinFET

Natalia Seoane, Guillermo Indalecio, Enrique Comesana, Manuel Aldegunde, Antonio J. Garcia-Loureiro, Karol Kalna Orcid Logo

IEEE Transactions on Electron Devices, Volume: 61, Issue: 2, Pages: 466 - 472

Swansea University Author: Karol Kalna Orcid Logo

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DOI (Published version): 10.1109/TED.2013.2294213

Published in: IEEE Transactions on Electron Devices
Published: 2014
URI: https://cronfa.swan.ac.uk/Record/cronfa21848
first_indexed 2015-07-30T02:02:59Z
last_indexed 2018-02-09T04:59:44Z
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spelling 2017-03-02T13:22:37.1792495 v2 21848 2015-05-30 Random Dopant, Line-Edge Roughness, and Gate Workfunction Variability in a Nano InGaAs FinFET 1329a42020e44fdd13de2f20d5143253 0000-0002-6333-9189 Karol Kalna Karol Kalna true false 2015-05-30 ACEM Journal Article IEEE Transactions on Electron Devices 61 2 466 472 31 12 2014 2014-12-31 10.1109/TED.2013.2294213 COLLEGE NANME Aerospace, Civil, Electrical, and Mechanical Engineering COLLEGE CODE ACEM Swansea University 2017-03-02T13:22:37.1792495 2015-05-30T21:11:56.7505793 Faculty of Science and Engineering School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering Natalia Seoane 1 Guillermo Indalecio 2 Enrique Comesana 3 Manuel Aldegunde 4 Antonio J. Garcia-Loureiro 5 Karol Kalna 0000-0002-6333-9189 6
title Random Dopant, Line-Edge Roughness, and Gate Workfunction Variability in a Nano InGaAs FinFET
spellingShingle Random Dopant, Line-Edge Roughness, and Gate Workfunction Variability in a Nano InGaAs FinFET
Karol Kalna
title_short Random Dopant, Line-Edge Roughness, and Gate Workfunction Variability in a Nano InGaAs FinFET
title_full Random Dopant, Line-Edge Roughness, and Gate Workfunction Variability in a Nano InGaAs FinFET
title_fullStr Random Dopant, Line-Edge Roughness, and Gate Workfunction Variability in a Nano InGaAs FinFET
title_full_unstemmed Random Dopant, Line-Edge Roughness, and Gate Workfunction Variability in a Nano InGaAs FinFET
title_sort Random Dopant, Line-Edge Roughness, and Gate Workfunction Variability in a Nano InGaAs FinFET
author_id_str_mv 1329a42020e44fdd13de2f20d5143253
author_id_fullname_str_mv 1329a42020e44fdd13de2f20d5143253_***_Karol Kalna
author Karol Kalna
author2 Natalia Seoane
Guillermo Indalecio
Enrique Comesana
Manuel Aldegunde
Antonio J. Garcia-Loureiro
Karol Kalna
format Journal article
container_title IEEE Transactions on Electron Devices
container_volume 61
container_issue 2
container_start_page 466
publishDate 2014
institution Swansea University
doi_str_mv 10.1109/TED.2013.2294213
college_str Faculty of Science and Engineering
hierarchytype
hierarchy_top_id facultyofscienceandengineering
hierarchy_top_title Faculty of Science and Engineering
hierarchy_parent_id facultyofscienceandengineering
hierarchy_parent_title Faculty of Science and Engineering
department_str School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering{{{_:::_}}}Faculty of Science and Engineering{{{_:::_}}}School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering
document_store_str 0
active_str 0
published_date 2014-12-31T11:45:14Z
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score 11.088971

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