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Three-Dimensional Simulations of Random Dopant and Metal-Gate Workfunction Variability in an In0.53Ga0.47As GAA MOSFET / N Seoane, G Indalecio, E Comesana, A. J Garcia-Loureiro, M Aldegunde, K Kalna, Karol Kalna
IEEE Electron Device Letters, Volume: 34, Issue: 2, Pages: 205 - 207
Swansea University Author: Karol Kalna
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Three-Dimensional Simulations of Random Dopant and Metal-Gate Workfunction Variability in an In0.53Ga0.47As GAA MOSFET
|Published in:||IEEE Electron Device Letters|
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The first work on variability of device characteristics of a novel, n-type non-planar InGaAs MOSFETs with a high indium content channel is studied using parallel 3-D quantum corrected drift-diffusion simulations. The device variability is paramount for future digital applications for the 14 or 11 nm CMOS technology with substantially funded R&D. Published in the best letter journal (my first ever paper there) in the field. The work is the result of intensive research by Marie-Curie Fellow I am hosting.
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