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Three-Dimensional Simulations of Random Dopant and Metal-Gate Workfunction Variability in an In0.53Ga0.47As GAA MOSFET

N Seoane, G Indalecio, E Comesana, A. J Garcia-Loureiro, M Aldegunde, K Kalna, Karol Kalna Orcid Logo

IEEE Electron Device Letters, Volume: 34, Issue: 2, Pages: 205 - 207

Swansea University Author: Karol Kalna Orcid Logo

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Published in: IEEE Electron Device Letters
ISSN: 0741-3106 1558-0563
Published: 2013
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URI: https://cronfa.swan.ac.uk/Record/cronfa14323
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spelling 2017-03-02T13:34:53.9176118 v2 14323 2013-09-03 Three-Dimensional Simulations of Random Dopant and Metal-Gate Workfunction Variability in an In0.53Ga0.47As GAA MOSFET 1329a42020e44fdd13de2f20d5143253 0000-0002-6333-9189 Karol Kalna Karol Kalna true false 2013-09-03 EEEG Journal Article IEEE Electron Device Letters 34 2 205 207 0741-3106 1558-0563 31 12 2013 2013-12-31 10.1109/led.2012.2230313 The first work on variability of device characteristics of a novel, n-type non-planar InGaAs MOSFETs with a high indium content channel is studied using parallel 3-D quantum corrected drift-diffusion simulations. The device variability is paramount for future digital applications for the 14 or 11 nm CMOS technology with substantially funded R&D. Published in the best letter journal (my first ever paper there) in the field. The work is the result of intensive research by Marie-Curie Fellow I am hosting. COLLEGE NANME Electronic and Electrical Engineering COLLEGE CODE EEEG Swansea University 2017-03-02T13:34:53.9176118 2013-09-03T06:36:35.0000000 College of Engineering Engineering N Seoane 1 G Indalecio 2 E Comesana 3 A. J Garcia-Loureiro 4 M Aldegunde 5 K Kalna 6 Karol Kalna 0000-0002-6333-9189 7
title Three-Dimensional Simulations of Random Dopant and Metal-Gate Workfunction Variability in an In0.53Ga0.47As GAA MOSFET
spellingShingle Three-Dimensional Simulations of Random Dopant and Metal-Gate Workfunction Variability in an In0.53Ga0.47As GAA MOSFET
Karol Kalna
title_short Three-Dimensional Simulations of Random Dopant and Metal-Gate Workfunction Variability in an In0.53Ga0.47As GAA MOSFET
title_full Three-Dimensional Simulations of Random Dopant and Metal-Gate Workfunction Variability in an In0.53Ga0.47As GAA MOSFET
title_fullStr Three-Dimensional Simulations of Random Dopant and Metal-Gate Workfunction Variability in an In0.53Ga0.47As GAA MOSFET
title_full_unstemmed Three-Dimensional Simulations of Random Dopant and Metal-Gate Workfunction Variability in an In0.53Ga0.47As GAA MOSFET
title_sort Three-Dimensional Simulations of Random Dopant and Metal-Gate Workfunction Variability in an In0.53Ga0.47As GAA MOSFET
author_id_str_mv 1329a42020e44fdd13de2f20d5143253
author_id_fullname_str_mv 1329a42020e44fdd13de2f20d5143253_***_Karol Kalna
author Karol Kalna
author2 N Seoane
G Indalecio
E Comesana
A. J Garcia-Loureiro
M Aldegunde
K Kalna
Karol Kalna
format Journal article
container_title IEEE Electron Device Letters
container_volume 34
container_issue 2
container_start_page 205
publishDate 2013
institution Swansea University
issn 0741-3106
1558-0563
doi_str_mv 10.1109/led.2012.2230313
college_str College of Engineering
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hierarchy_top_id collegeofengineering
hierarchy_top_title College of Engineering
hierarchy_parent_id collegeofengineering
hierarchy_parent_title College of Engineering
department_str Engineering{{{_:::_}}}College of Engineering{{{_:::_}}}Engineering
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published_date 2013-12-31T03:31:04Z
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