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Random dopant related variability in the 30 nm gate length In<sub>0.75</sub>Ga<sub>0.25</sub>As implant free MOSFET / Natalia Seoane; Manuel Aldegunde; Antonio Jesus García-Loureiro; Raul Valin; Karol Kalna

Journal of Computational Electronics

Swansea University Author: Kalna, Karol

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DOI (Published version): 10.1007/s10825-008-0233-3

Published in: Journal of Computational Electronics
Published: 2008
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College: College of Engineering