No Cover Image

Journal article 457 views

Random dopant related variability in the 30 nm gate length In<sub>0.75</sub>Ga<sub>0.25</sub>As implant free MOSFET / Karol, Kalna

Journal of Computational Electronics

Swansea University Author: Karol, Kalna

Full text not available from this repository: check for access using links below.

DOI (Published version): 10.1007/s10825-008-0233-3

Published in: Journal of Computational Electronics
Published: 2008
Tags: Add Tag
No Tags, Be the first to tag this record!
College: College of Engineering