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Journal article 885 views

Random dopant related variability in the 30 nm gate length In<sub>0.75</sub>Ga<sub>0.25</sub>As implant free MOSFET

Natalia Seoane, Manuel Aldegunde, Antonio Jesus García-Loureiro, Raul Valin, Karol Kalna Orcid Logo

Journal of Computational Electronics

Swansea University Author: Karol Kalna Orcid Logo

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DOI (Published version): 10.1007/s10825-008-0233-3

Published in: Journal of Computational Electronics
Published: 2008
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College: Faculty of Science and Engineering