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Random dopant related variability in the 30 nm gate length In<sub>0.75</sub>Ga<sub>0.25</sub>As implant free MOSFET / Karol, Kalna

Journal of Computational Electronics

Swansea University Author: Karol, Kalna

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DOI (Published version): 10.1007/s10825-008-0233-3

Published in: Journal of Computational Electronics
Published: 2008
URI: https://cronfa.swan.ac.uk/Record/cronfa6060
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first_indexed 2013-07-23T11:56:05Z
last_indexed 2018-02-09T04:33:11Z
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spelling 2015-05-31T18:01:08.8926395 v2 6060 2013-09-03 Random dopant related variability in the 30 nm gate length In&lt;sub&gt;0.75&lt;/sub&gt;Ga&lt;sub&gt;0.25&lt;/sub&gt;As implant free MOSFET 1329a42020e44fdd13de2f20d5143253 0000-0002-6333-9189 Karol Kalna Karol Kalna true false 2013-09-03 EEN Journal Article Journal of Computational Electronics 31 12 2008 2008-12-31 10.1007/s10825-008-0233-3 COLLEGE NANME Engineering COLLEGE CODE EEN Swansea University 2015-05-31T18:01:08.8926395 2013-09-03T06:36:16.0000000 College of Engineering Engineering Natalia Seoane 1 Manuel Aldegunde 2 Antonio Jesus García-Loureiro 3 Raul Valin 4 Karol Kalna 0000-0002-6333-9189 5
title Random dopant related variability in the 30 nm gate length In&lt;sub&gt;0.75&lt;/sub&gt;Ga&lt;sub&gt;0.25&lt;/sub&gt;As implant free MOSFET
spellingShingle Random dopant related variability in the 30 nm gate length In&lt;sub&gt;0.75&lt;/sub&gt;Ga&lt;sub&gt;0.25&lt;/sub&gt;As implant free MOSFET
Karol, Kalna
title_short Random dopant related variability in the 30 nm gate length In&lt;sub&gt;0.75&lt;/sub&gt;Ga&lt;sub&gt;0.25&lt;/sub&gt;As implant free MOSFET
title_full Random dopant related variability in the 30 nm gate length In&lt;sub&gt;0.75&lt;/sub&gt;Ga&lt;sub&gt;0.25&lt;/sub&gt;As implant free MOSFET
title_fullStr Random dopant related variability in the 30 nm gate length In&lt;sub&gt;0.75&lt;/sub&gt;Ga&lt;sub&gt;0.25&lt;/sub&gt;As implant free MOSFET
title_full_unstemmed Random dopant related variability in the 30 nm gate length In&lt;sub&gt;0.75&lt;/sub&gt;Ga&lt;sub&gt;0.25&lt;/sub&gt;As implant free MOSFET
title_sort Random dopant related variability in the 30 nm gate length In&lt;sub&gt;0.75&lt;/sub&gt;Ga&lt;sub&gt;0.25&lt;/sub&gt;As implant free MOSFET
author_id_str_mv 1329a42020e44fdd13de2f20d5143253
author_id_fullname_str_mv 1329a42020e44fdd13de2f20d5143253_***_Karol, Kalna
author Karol, Kalna
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container_title Journal of Computational Electronics
publishDate 2008
institution Swansea University
doi_str_mv 10.1007/s10825-008-0233-3
college_str College of Engineering
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hierarchy_top_title College of Engineering
hierarchy_parent_id collegeofengineering
hierarchy_parent_title College of Engineering
department_str Engineering{{{_:::_}}}College of Engineering{{{_:::_}}}Engineering
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published_date 2008-12-31T03:19:19Z
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