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Random dopant related variability in the 30 nm gate length In<sub>0.75</sub>Ga<sub>0.25</sub>As implant free MOSFET

Natalia Seoane, Manuel Aldegunde, Antonio Jesus García-Loureiro, Raul Valin, Karol Kalna Orcid Logo

Journal of Computational Electronics

Swansea University Author: Karol Kalna Orcid Logo

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DOI (Published version): 10.1007/s10825-008-0233-3

Published in: Journal of Computational Electronics
Published: 2008
URI: https://cronfa.swan.ac.uk/Record/cronfa6060
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first_indexed 2013-07-23T11:56:05Z
last_indexed 2018-02-09T04:33:11Z
id cronfa6060
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spelling 2015-05-31T18:01:08.8926395 v2 6060 2013-09-03 Random dopant related variability in the 30 nm gate length In<sub>0.75</sub>Ga<sub>0.25</sub>As implant free MOSFET 1329a42020e44fdd13de2f20d5143253 0000-0002-6333-9189 Karol Kalna Karol Kalna true false 2013-09-03 EEEG Journal Article Journal of Computational Electronics 31 12 2008 2008-12-31 10.1007/s10825-008-0233-3 COLLEGE NANME Electronic and Electrical Engineering COLLEGE CODE EEEG Swansea University 2015-05-31T18:01:08.8926395 2013-09-03T06:36:16.0000000 Faculty of Science and Engineering School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering Natalia Seoane 1 Manuel Aldegunde 2 Antonio Jesus García-Loureiro 3 Raul Valin 4 Karol Kalna 0000-0002-6333-9189 5
title Random dopant related variability in the 30 nm gate length In<sub>0.75</sub>Ga<sub>0.25</sub>As implant free MOSFET
spellingShingle Random dopant related variability in the 30 nm gate length In<sub>0.75</sub>Ga<sub>0.25</sub>As implant free MOSFET
Karol Kalna
title_short Random dopant related variability in the 30 nm gate length In<sub>0.75</sub>Ga<sub>0.25</sub>As implant free MOSFET
title_full Random dopant related variability in the 30 nm gate length In<sub>0.75</sub>Ga<sub>0.25</sub>As implant free MOSFET
title_fullStr Random dopant related variability in the 30 nm gate length In<sub>0.75</sub>Ga<sub>0.25</sub>As implant free MOSFET
title_full_unstemmed Random dopant related variability in the 30 nm gate length In<sub>0.75</sub>Ga<sub>0.25</sub>As implant free MOSFET
title_sort Random dopant related variability in the 30 nm gate length In<sub>0.75</sub>Ga<sub>0.25</sub>As implant free MOSFET
author_id_str_mv 1329a42020e44fdd13de2f20d5143253
author_id_fullname_str_mv 1329a42020e44fdd13de2f20d5143253_***_Karol Kalna
author Karol Kalna
author2 Natalia Seoane
Manuel Aldegunde
Antonio Jesus García-Loureiro
Raul Valin
Karol Kalna
format Journal article
container_title Journal of Computational Electronics
publishDate 2008
institution Swansea University
doi_str_mv 10.1007/s10825-008-0233-3
college_str Faculty of Science and Engineering
hierarchytype
hierarchy_top_id facultyofscienceandengineering
hierarchy_top_title Faculty of Science and Engineering
hierarchy_parent_id facultyofscienceandengineering
hierarchy_parent_title Faculty of Science and Engineering
department_str School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering{{{_:::_}}}Faculty of Science and Engineering{{{_:::_}}}School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering
document_store_str 0
active_str 0
published_date 2008-12-31T03:07:26Z
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score 10.999161

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