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3D ‘atomistic’ simulations of dopant induced variability in nanoscale implant free In<sub>0.75</sub>Ga<sub>0.25</sub>As MOSFETs / Karol, Kalna

Solid-State Electronics, Volume: 69, Start page: 43

Swansea University Author: Karol, Kalna

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Published in: Solid-State Electronics
ISSN: 0038-1101
Published: 2012
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URI: https://cronfa.swan.ac.uk/Record/cronfa12692
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College: College of Engineering
Start Page: 43