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Effect of interface state trap density on the characteristics of n-type, enhancement-mode, implant-free In<sub>0.3</sub>Ga<sub>0.7</sub>As MOSFETs / Karol, Kalna

Microelectronic Engineering

Swansea University Author: Karol, Kalna

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DOI (Published version): 10.1016/j.mee.2009.03.024

Published in: Microelectronic Engineering
Published: 2009
URI: https://cronfa.swan.ac.uk/Record/cronfa6063
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College: College of Engineering