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Effect of interface state trap density on the characteristics of n-type, enhancement-mode, implant-free In<sub>0.3</sub>Ga<sub>0.7</sub>As MOSFETs

Karol Kalna Orcid Logo

Microelectronic Engineering

Swansea University Author: Karol Kalna Orcid Logo

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DOI (Published version): 10.1016/j.mee.2009.03.024

Published in: Microelectronic Engineering
Published: 2009
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College: Faculty of Science and Engineering