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Simulation Study of Performance for a 20-nm Gate Length In0.53Ga0.47 As Implant Free Quantum Well MOSFET

Brahim Benbakhti, Antonio Martinez, Karol Kalna Orcid Logo, Geert Hellings, Geert Eneman, Kristin De Meyer, Marc Meuris

IEEE Transactions on Nanotechnology, Volume: 11, Issue: 4, Pages: 808 - 817

Swansea University Author: Karol Kalna Orcid Logo

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Published in: IEEE Transactions on Nanotechnology
ISSN: 1536-125X 1941-0085
Published: 2012
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Item Description: The work summarises the final results of a three-year FP7 STREP project DUALOGIC (€ 9.1M). It combines state-of-the-art simulations including drift-diffusion approach, ensemble Monte Carlo technique, and Non-Equilibrium Green’s Function method with experiment to forecast the performance of a 20 nm gate length InGaAs channel nMOSFET for a future dual-logic CMOS technology. It gives vision and guidance to semiconductor industry in the R&D for digital application how to achieve improvement in performance, functionality and density.
College: Faculty of Science and Engineering
Issue: 4
Start Page: 808
End Page: 817