Journal article 917 views
Simulation Study of Performance for a 20-nm Gate Length In0.53Ga0.47 As Implant Free Quantum Well MOSFET
Brahim Benbakhti,
Antonio Martinez,
Karol Kalna 
,
Geert Hellings,
Geert Eneman,
Kristin De Meyer,
Marc Meuris
,
Geert Hellings,
Geert Eneman,
Kristin De Meyer,
Marc Meuris
IEEE Transactions on Nanotechnology, Volume: 11, Issue: 4, Pages: 808 - 817
Swansea University Author:
Karol Kalna
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DOI (Published version): 10.1109/tnano.2012.2199514
Abstract
Simulation Study of Performance for a 20-nm Gate Length In0.53Ga0.47 As Implant Free Quantum Well MOSFET
| Published in: | IEEE Transactions on Nanotechnology |
|---|---|
| ISSN: | 1536-125X 1941-0085 |
| Published: |
2012
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| Online Access: |
Check full text
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| URI: | https://cronfa.swan.ac.uk/Record/cronfa12691 |
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| Item Description: |
The work summarises the final results of a three-year FP7 STREP project DUALOGIC (€ 9.1M). It combines state-of-the-art simulations including drift-diffusion approach, ensemble Monte Carlo technique, and Non-Equilibrium Green’s Function method with experiment to forecast the performance of a 20 nm gate length InGaAs channel nMOSFET for a future dual-logic CMOS technology. It gives vision and guidance to semiconductor industry in the R&D for digital application how to achieve improvement in performance, functionality and density. |
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| College: |
Faculty of Science and Engineering |
| Issue: |
4 |
| Start Page: |
808 |
| End Page: |
817 |