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Simulation Study of Performance for a 20-nm Gate Length In0.53Ga0.47 As Implant Free Quantum Well MOSFET

Brahim Benbakhti, Antonio Martinez, Karol Kalna Orcid Logo, Geert Hellings, Geert Eneman, Kristin De Meyer, Marc Meuris

IEEE Transactions on Nanotechnology, Volume: 11, Issue: 4, Pages: 808 - 817

Swansea University Author: Karol Kalna Orcid Logo

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Published in: IEEE Transactions on Nanotechnology
ISSN: 1536-125X 1941-0085
Published: 2012
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URI: https://cronfa.swan.ac.uk/Record/cronfa12691
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spelling 2017-03-02T12:57:30.8324597 v2 12691 2013-09-03 Simulation Study of Performance for a 20-nm Gate Length In0.53Ga0.47 As Implant Free Quantum Well MOSFET 1329a42020e44fdd13de2f20d5143253 0000-0002-6333-9189 Karol Kalna Karol Kalna true false 2013-09-03 EEEG Journal Article IEEE Transactions on Nanotechnology 11 4 808 817 1536-125X 1941-0085 31 12 2012 2012-12-31 10.1109/tnano.2012.2199514 The work summarises the final results of a three-year FP7 STREP project DUALOGIC (€ 9.1M). It combines state-of-the-art simulations including drift-diffusion approach, ensemble Monte Carlo technique, and Non-Equilibrium Green’s Function method with experiment to forecast the performance of a 20 nm gate length InGaAs channel nMOSFET for a future dual-logic CMOS technology. It gives vision and guidance to semiconductor industry in the R&D for digital application how to achieve improvement in performance, functionality and density. COLLEGE NANME Electronic and Electrical Engineering COLLEGE CODE EEEG Swansea University 2017-03-02T12:57:30.8324597 2013-09-03T06:36:39.0000000 College of Engineering Engineering Brahim Benbakhti 1 Antonio Martinez 2 Karol Kalna 0000-0002-6333-9189 3 Geert Hellings 4 Geert Eneman 5 Kristin De Meyer 6 Marc Meuris 7
title Simulation Study of Performance for a 20-nm Gate Length In0.53Ga0.47 As Implant Free Quantum Well MOSFET
spellingShingle Simulation Study of Performance for a 20-nm Gate Length In0.53Ga0.47 As Implant Free Quantum Well MOSFET
Karol, Kalna
title_short Simulation Study of Performance for a 20-nm Gate Length In0.53Ga0.47 As Implant Free Quantum Well MOSFET
title_full Simulation Study of Performance for a 20-nm Gate Length In0.53Ga0.47 As Implant Free Quantum Well MOSFET
title_fullStr Simulation Study of Performance for a 20-nm Gate Length In0.53Ga0.47 As Implant Free Quantum Well MOSFET
title_full_unstemmed Simulation Study of Performance for a 20-nm Gate Length In0.53Ga0.47 As Implant Free Quantum Well MOSFET
title_sort Simulation Study of Performance for a 20-nm Gate Length In0.53Ga0.47 As Implant Free Quantum Well MOSFET
author_id_str_mv 1329a42020e44fdd13de2f20d5143253
author_id_fullname_str_mv 1329a42020e44fdd13de2f20d5143253_***_Karol, Kalna_***_0000-0002-6333-9189
author Karol, Kalna
author2 Brahim Benbakhti
Antonio Martinez
Karol Kalna
Geert Hellings
Geert Eneman
Kristin De Meyer
Marc Meuris
format Journal article
container_title IEEE Transactions on Nanotechnology
container_volume 11
container_issue 4
container_start_page 808
publishDate 2012
institution Swansea University
issn 1536-125X
1941-0085
doi_str_mv 10.1109/tnano.2012.2199514
college_str College of Engineering
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hierarchy_top_id collegeofengineering
hierarchy_top_title College of Engineering
hierarchy_parent_id collegeofengineering
hierarchy_parent_title College of Engineering
department_str Engineering{{{_:::_}}}College of Engineering{{{_:::_}}}Engineering
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published_date 2012-12-31T03:28:04Z
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