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Random Dopant, Line-Edge Roughness, and Gate Workfunction Variability in a Nano InGaAs FinFET

Natalia Seoane, Guillermo Indalecio, Enrique Comesana, Manuel Aldegunde, Antonio J. Garcia-Loureiro, Karol Kalna Orcid Logo

IEEE Transactions on Electron Devices, Volume: 61, Issue: 2, Pages: 466 - 472

Swansea University Author: Karol Kalna Orcid Logo

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DOI (Published version): 10.1109/TED.2013.2294213

Published in: IEEE Transactions on Electron Devices
Published: 2014
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College: Faculty of Science and Engineering
Issue: 2
Start Page: 466
End Page: 472