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Improvement to thin film CdTe solar cells with controlled back surface oxidation

S.L. Rugen-Hankey, A.J. Clayton, V. Barrioz, G. Kartopu, S.J.C. Irvine, J.D. McGettrick, D. Hammond, James McGettrick Orcid Logo, Stuart Irvine Orcid Logo

Solar Energy Materials and Solar Cells, Volume: 136, Pages: 213 - 217

Swansea University Authors: James McGettrick Orcid Logo, Stuart Irvine Orcid Logo

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DOI (Published version): 10.1016/j.solmat.2014.10.044

Abstract

Thin film CdTe solar cells were produced by MOCVD, at atmospheric pressure, under a hydrogen atmosphere (i.e. oxygen-free). Window layer alloying with zinc (forming Cd1−xZnxS) and extrinsic p-type doping with arsenic (giving CdTe:As) have been used to improve photovoltaic solar cell performances, bu...

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Published in: Solar Energy Materials and Solar Cells
ISSN: 0927-0248
Published: 2015
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URI: https://cronfa.swan.ac.uk/Record/cronfa29569
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spelling 2017-07-12T10:28:13.6220017 v2 29569 2016-08-12 Improvement to thin film CdTe solar cells with controlled back surface oxidation bdbacc591e2de05180e0fd3cc13fa480 0000-0002-7719-2958 James McGettrick James McGettrick true false 1ddb966eccef99aa96e87f1ea4917f1f 0000-0002-1652-4496 Stuart Irvine Stuart Irvine true false 2016-08-12 MTLS Thin film CdTe solar cells were produced by MOCVD, at atmospheric pressure, under a hydrogen atmosphere (i.e. oxygen-free). Window layer alloying with zinc (forming Cd1−xZnxS) and extrinsic p-type doping with arsenic (giving CdTe:As) have been used to improve photovoltaic solar cell performances, but as-grown MOCVD-CdTe PV cells are still typically characterised by low Voc (~620–690 mV). Post-deposition annealing in air for 30 min at low temperature (170 °C) prior to evaporation of the back contacts led to significant increases in Voc and FF. XPS measurements revealed back surface oxidation, resulting in formation of Te–O species. This was also the case for a device aged under ambient laboratory conditions. Extended annealing in air of a fresh device, for up to 180 min, continued to improve both Voc and FF. At longer annealing times the Voc remained relatively stable whilst the FF started to deteriorate. External quantum efficiency showed loss of photocurrent generation after excessive oxidation prior to back contact metallisation. Controlled back surface oxidation resulted in Voc values exceeding 800 mV and a best cell efficiency of 15.3%. Journal Article Solar Energy Materials and Solar Cells 136 213 217 0927-0248 CdTe; Thin film; Photovoltaics; Open-circuit voltage; MOCVD 31 5 2015 2015-05-31 10.1016/j.solmat.2014.10.044 COLLEGE NANME Materials Science and Engineering COLLEGE CODE MTLS Swansea University 2017-07-12T10:28:13.6220017 2016-08-12T16:43:18.6843510 Faculty of Science and Engineering School of Engineering and Applied Sciences - Materials Science and Engineering S.L. Rugen-Hankey 1 A.J. Clayton 2 V. Barrioz 3 G. Kartopu 4 S.J.C. Irvine 5 J.D. McGettrick 6 D. Hammond 7 James McGettrick 0000-0002-7719-2958 8 Stuart Irvine 0000-0002-1652-4496 9
title Improvement to thin film CdTe solar cells with controlled back surface oxidation
spellingShingle Improvement to thin film CdTe solar cells with controlled back surface oxidation
James McGettrick
Stuart Irvine
title_short Improvement to thin film CdTe solar cells with controlled back surface oxidation
title_full Improvement to thin film CdTe solar cells with controlled back surface oxidation
title_fullStr Improvement to thin film CdTe solar cells with controlled back surface oxidation
title_full_unstemmed Improvement to thin film CdTe solar cells with controlled back surface oxidation
title_sort Improvement to thin film CdTe solar cells with controlled back surface oxidation
author_id_str_mv bdbacc591e2de05180e0fd3cc13fa480
1ddb966eccef99aa96e87f1ea4917f1f
author_id_fullname_str_mv bdbacc591e2de05180e0fd3cc13fa480_***_James McGettrick
1ddb966eccef99aa96e87f1ea4917f1f_***_Stuart Irvine
author James McGettrick
Stuart Irvine
author2 S.L. Rugen-Hankey
A.J. Clayton
V. Barrioz
G. Kartopu
S.J.C. Irvine
J.D. McGettrick
D. Hammond
James McGettrick
Stuart Irvine
format Journal article
container_title Solar Energy Materials and Solar Cells
container_volume 136
container_start_page 213
publishDate 2015
institution Swansea University
issn 0927-0248
doi_str_mv 10.1016/j.solmat.2014.10.044
college_str Faculty of Science and Engineering
hierarchytype
hierarchy_top_id facultyofscienceandengineering
hierarchy_top_title Faculty of Science and Engineering
hierarchy_parent_id facultyofscienceandengineering
hierarchy_parent_title Faculty of Science and Engineering
department_str School of Engineering and Applied Sciences - Materials Science and Engineering{{{_:::_}}}Faculty of Science and Engineering{{{_:::_}}}School of Engineering and Applied Sciences - Materials Science and Engineering
document_store_str 0
active_str 0
description Thin film CdTe solar cells were produced by MOCVD, at atmospheric pressure, under a hydrogen atmosphere (i.e. oxygen-free). Window layer alloying with zinc (forming Cd1−xZnxS) and extrinsic p-type doping with arsenic (giving CdTe:As) have been used to improve photovoltaic solar cell performances, but as-grown MOCVD-CdTe PV cells are still typically characterised by low Voc (~620–690 mV). Post-deposition annealing in air for 30 min at low temperature (170 °C) prior to evaporation of the back contacts led to significant increases in Voc and FF. XPS measurements revealed back surface oxidation, resulting in formation of Te–O species. This was also the case for a device aged under ambient laboratory conditions. Extended annealing in air of a fresh device, for up to 180 min, continued to improve both Voc and FF. At longer annealing times the Voc remained relatively stable whilst the FF started to deteriorate. External quantum efficiency showed loss of photocurrent generation after excessive oxidation prior to back contact metallisation. Controlled back surface oxidation resulted in Voc values exceeding 800 mV and a best cell efficiency of 15.3%.
published_date 2015-05-31T03:35:58Z
_version_ 1763751554979987456
score 10.999524

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