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Raman mapping analysis for removal of surface secondary phases of CZTS films using chemical etching

Zhengfei Wei, Michael J. Newman, Wing C. Tsoi, Trystan Watson Orcid Logo, Wing Chung Tsoi Orcid Logo

Applied Physics Letters, Volume: 109, Issue: 12, Start page: 123902

Swansea University Authors: Trystan Watson Orcid Logo, Wing Chung Tsoi Orcid Logo

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DOI (Published version): 10.1063/1.4963134

Abstract

Raman spectroscopy has been widely used as a non-destructive surface characterization method for the Cu 2ZnSnS4 (CZTS) thin films. Secondary phases, which often co-exist with CZTS, are detrimental to the device performance. In this work, removal of the secondary phases using sodium sulfide (Na 2S) a...

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Published in: Applied Physics Letters
ISSN: 1077-3118
Published: 2016
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URI: https://cronfa.swan.ac.uk/Record/cronfa29850
first_indexed 2016-09-09T12:57:43Z
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spelling 2016-10-03T15:47:15.2244910 v2 29850 2016-09-09 Raman mapping analysis for removal of surface secondary phases of CZTS films using chemical etching a210327b52472cfe8df9b8108d661457 0000-0002-8015-1436 Trystan Watson Trystan Watson true false 7e5f541df6635a9a8e1a579ff2de5d56 0000-0003-3836-5139 Wing Chung Tsoi Wing Chung Tsoi true false 2016-09-09 EAAS Raman spectroscopy has been widely used as a non-destructive surface characterization method for the Cu 2ZnSnS4 (CZTS) thin films. Secondary phases, which often co-exist with CZTS, are detrimental to the device performance. In this work, removal of the secondary phases using sodium sulfide (Na 2S) aqueous solution etching in various time durations was investigated. Raman scattering mapping provides a direct visualization of phase distribution in CZTS-based materials on a relatively large scale (1 mm × 10 mm). Both as-grown and etched CZTS absorber layers were examined by Raman spectroscopy with a 532 nm excitation laser light in the range of 50–500 cm-1. A clear reduction of the secondary phases (mainly SnS) at the surface after etching was confirmed by Raman spectroscopy and scanning electron microscopy. Room temperature photoluminescence (PL) reveals a pronounced correlation between the amount of secondary phases and photoluminescence peak position. The PL spectra of the regions with more Sn-rich secondary phases show clearly a shift to high wavelength of the peak position, in comparison with regions with less Sn-rich secondary phases. These observed PL changes could be due to Sn-rich defects which may cause recombination processes. Journal Article Applied Physics Letters 109 12 123902 1077-3118 31 12 2016 2016-12-31 10.1063/1.4963134 COLLEGE NANME Engineering and Applied Sciences School COLLEGE CODE EAAS Swansea University 2016-10-03T15:47:15.2244910 2016-09-09T09:06:35.5327214 Faculty of Science and Engineering School of Engineering and Applied Sciences - Materials Science and Engineering Zhengfei Wei 1 Michael J. Newman 2 Wing C. Tsoi 3 Trystan Watson 0000-0002-8015-1436 4 Wing Chung Tsoi 0000-0003-3836-5139 5 0029850-09092016090659.pdf wei2016.pdf 2016-09-09T09:06:59.3230000 Output 978193 application/pdf Accepted Manuscript true 2016-09-09T00:00:00.0000000 false
title Raman mapping analysis for removal of surface secondary phases of CZTS films using chemical etching
spellingShingle Raman mapping analysis for removal of surface secondary phases of CZTS films using chemical etching
Trystan Watson
Wing Chung Tsoi
title_short Raman mapping analysis for removal of surface secondary phases of CZTS films using chemical etching
title_full Raman mapping analysis for removal of surface secondary phases of CZTS films using chemical etching
title_fullStr Raman mapping analysis for removal of surface secondary phases of CZTS films using chemical etching
title_full_unstemmed Raman mapping analysis for removal of surface secondary phases of CZTS films using chemical etching
title_sort Raman mapping analysis for removal of surface secondary phases of CZTS films using chemical etching
author_id_str_mv a210327b52472cfe8df9b8108d661457
7e5f541df6635a9a8e1a579ff2de5d56
author_id_fullname_str_mv a210327b52472cfe8df9b8108d661457_***_Trystan Watson
7e5f541df6635a9a8e1a579ff2de5d56_***_Wing Chung Tsoi
author Trystan Watson
Wing Chung Tsoi
author2 Zhengfei Wei
Michael J. Newman
Wing C. Tsoi
Trystan Watson
Wing Chung Tsoi
format Journal article
container_title Applied Physics Letters
container_volume 109
container_issue 12
container_start_page 123902
publishDate 2016
institution Swansea University
issn 1077-3118
doi_str_mv 10.1063/1.4963134
college_str Faculty of Science and Engineering
hierarchytype
hierarchy_top_id facultyofscienceandengineering
hierarchy_top_title Faculty of Science and Engineering
hierarchy_parent_id facultyofscienceandengineering
hierarchy_parent_title Faculty of Science and Engineering
department_str School of Engineering and Applied Sciences - Materials Science and Engineering{{{_:::_}}}Faculty of Science and Engineering{{{_:::_}}}School of Engineering and Applied Sciences - Materials Science and Engineering
document_store_str 1
active_str 0
description Raman spectroscopy has been widely used as a non-destructive surface characterization method for the Cu 2ZnSnS4 (CZTS) thin films. Secondary phases, which often co-exist with CZTS, are detrimental to the device performance. In this work, removal of the secondary phases using sodium sulfide (Na 2S) aqueous solution etching in various time durations was investigated. Raman scattering mapping provides a direct visualization of phase distribution in CZTS-based materials on a relatively large scale (1 mm × 10 mm). Both as-grown and etched CZTS absorber layers were examined by Raman spectroscopy with a 532 nm excitation laser light in the range of 50–500 cm-1. A clear reduction of the secondary phases (mainly SnS) at the surface after etching was confirmed by Raman spectroscopy and scanning electron microscopy. Room temperature photoluminescence (PL) reveals a pronounced correlation between the amount of secondary phases and photoluminescence peak position. The PL spectra of the regions with more Sn-rich secondary phases show clearly a shift to high wavelength of the peak position, in comparison with regions with less Sn-rich secondary phases. These observed PL changes could be due to Sn-rich defects which may cause recombination processes.
published_date 2016-12-31T13:02:36Z
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