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The effect of concentration and post-deposition annealing on silica coated germanium quantum dot thin films grown by vertical deposition

Brittany L. Oliva-Chatelain, Andrew Barron Orcid Logo

Main Group Chemistry, Volume: 15, Issue: 3, Pages: 275 - 286

Swansea University Author: Andrew Barron Orcid Logo

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DOI (Published version): 10.3233/MGC-160207

Abstract

Thin films have been grown using silica coated germanium quantum dot (Ge@SiO2) nanoparticles (NP) as well as their phosphorus-doped analogues (P-Ge@SiO2). The Ge quantum dots (QDs) were coated through the seeding of Stöber particles. The film thickness and uniformity were investigated using aqueous...

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Published in: Main Group Chemistry
ISSN: 1745-1167
Published: 2016
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URI: https://cronfa.swan.ac.uk/Record/cronfa30359
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first_indexed 2016-10-04T13:07:18Z
last_indexed 2018-02-09T05:16:13Z
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spelling 2017-08-03T13:38:29.5506279 v2 30359 2016-10-04 The effect of concentration and post-deposition annealing on silica coated germanium quantum dot thin films grown by vertical deposition 92e452f20936d688d36f91c78574241d 0000-0002-2018-8288 Andrew Barron Andrew Barron true false 2016-10-04 CHEG Thin films have been grown using silica coated germanium quantum dot (Ge@SiO2) nanoparticles (NP) as well as their phosphorus-doped analogues (P-Ge@SiO2). The Ge quantum dots (QDs) were coated through the seeding of Stöber particles. The film thickness and uniformity were investigated using aqueous solutions at a range of dilutions from the as-prepared solutions. The films have been characterized by SEM, XRD, and I/V measurements of test solar cells using doped n-type Si substrates. While the films were relatively compact they are actually made of large plaques of particles rather than a continuous layer, and the film thickness showed little significant variation with concentration for the Ge@SiO2 films; although a more usual trend was observed for the P-Ge@SiO2 films. Films grown using a solution 1/4 of the maximum concentration provided the highest solar cell efficiency. Thermal annealing of the films prior to deposition of the front and back contacts enabled a doubling in the cell efficiency, but did not show any marked increase in the density or crystallinity of the films. Journal Article Main Group Chemistry 15 3 275 286 1745-1167 15 9 2016 2016-09-15 10.3233/MGC-160207 COLLEGE NANME Chemical Engineering COLLEGE CODE CHEG Swansea University 2017-08-03T13:38:29.5506279 2016-10-04T09:34:45.8493972 College of Engineering Engineering Brittany L. Oliva-Chatelain 1 Andrew Barron 0000-0002-2018-8288 2 0030359-05102016094932.pdf oliva-chatelain2016.pdf 2016-10-05T09:49:32.2600000 Output 1019880 application/pdf Accepted Manuscript true 2016-10-05T00:00:00.0000000 false
title The effect of concentration and post-deposition annealing on silica coated germanium quantum dot thin films grown by vertical deposition
spellingShingle The effect of concentration and post-deposition annealing on silica coated germanium quantum dot thin films grown by vertical deposition
Andrew Barron
title_short The effect of concentration and post-deposition annealing on silica coated germanium quantum dot thin films grown by vertical deposition
title_full The effect of concentration and post-deposition annealing on silica coated germanium quantum dot thin films grown by vertical deposition
title_fullStr The effect of concentration and post-deposition annealing on silica coated germanium quantum dot thin films grown by vertical deposition
title_full_unstemmed The effect of concentration and post-deposition annealing on silica coated germanium quantum dot thin films grown by vertical deposition
title_sort The effect of concentration and post-deposition annealing on silica coated germanium quantum dot thin films grown by vertical deposition
author_id_str_mv 92e452f20936d688d36f91c78574241d
author_id_fullname_str_mv 92e452f20936d688d36f91c78574241d_***_Andrew Barron
author Andrew Barron
author2 Brittany L. Oliva-Chatelain
Andrew Barron
format Journal article
container_title Main Group Chemistry
container_volume 15
container_issue 3
container_start_page 275
publishDate 2016
institution Swansea University
issn 1745-1167
doi_str_mv 10.3233/MGC-160207
college_str College of Engineering
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hierarchy_top_title College of Engineering
hierarchy_parent_id collegeofengineering
hierarchy_parent_title College of Engineering
department_str Engineering{{{_:::_}}}College of Engineering{{{_:::_}}}Engineering
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description Thin films have been grown using silica coated germanium quantum dot (Ge@SiO2) nanoparticles (NP) as well as their phosphorus-doped analogues (P-Ge@SiO2). The Ge quantum dots (QDs) were coated through the seeding of Stöber particles. The film thickness and uniformity were investigated using aqueous solutions at a range of dilutions from the as-prepared solutions. The films have been characterized by SEM, XRD, and I/V measurements of test solar cells using doped n-type Si substrates. While the films were relatively compact they are actually made of large plaques of particles rather than a continuous layer, and the film thickness showed little significant variation with concentration for the Ge@SiO2 films; although a more usual trend was observed for the P-Ge@SiO2 films. Films grown using a solution 1/4 of the maximum concentration provided the highest solar cell efficiency. Thermal annealing of the films prior to deposition of the front and back contacts enabled a doubling in the cell efficiency, but did not show any marked increase in the density or crystallinity of the films.
published_date 2016-09-15T03:52:03Z
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