Journal article 1144 views 193 downloads
The effect of concentration and post-deposition annealing on silica coated germanium quantum dot thin films grown by vertical deposition
Main Group Chemistry, Volume: 15, Issue: 3, Pages: 275 - 286
Swansea University Author:
Andrew Barron
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DOI (Published version): 10.3233/MGC-160207
Abstract
Thin films have been grown using silica coated germanium quantum dot (Ge@SiO2) nanoparticles (NP) as well as their phosphorus-doped analogues (P-Ge@SiO2). The Ge quantum dots (QDs) were coated through the seeding of Stöber particles. The film thickness and uniformity were investigated using aqueous...
Published in: | Main Group Chemistry |
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ISSN: | 1745-1167 |
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2016
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URI: | https://cronfa.swan.ac.uk/Record/cronfa30359 |
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2017-08-03T13:38:29.5506279 v2 30359 2016-10-04 The effect of concentration and post-deposition annealing on silica coated germanium quantum dot thin films grown by vertical deposition 92e452f20936d688d36f91c78574241d 0000-0002-2018-8288 Andrew Barron Andrew Barron true false 2016-10-04 CHEG Thin films have been grown using silica coated germanium quantum dot (Ge@SiO2) nanoparticles (NP) as well as their phosphorus-doped analogues (P-Ge@SiO2). The Ge quantum dots (QDs) were coated through the seeding of Stöber particles. The film thickness and uniformity were investigated using aqueous solutions at a range of dilutions from the as-prepared solutions. The films have been characterized by SEM, XRD, and I/V measurements of test solar cells using doped n-type Si substrates. While the films were relatively compact they are actually made of large plaques of particles rather than a continuous layer, and the film thickness showed little significant variation with concentration for the Ge@SiO2 films; although a more usual trend was observed for the P-Ge@SiO2 films. Films grown using a solution 1/4 of the maximum concentration provided the highest solar cell efficiency. Thermal annealing of the films prior to deposition of the front and back contacts enabled a doubling in the cell efficiency, but did not show any marked increase in the density or crystallinity of the films. Journal Article Main Group Chemistry 15 3 275 286 1745-1167 15 9 2016 2016-09-15 10.3233/MGC-160207 COLLEGE NANME Chemical Engineering COLLEGE CODE CHEG Swansea University 2017-08-03T13:38:29.5506279 2016-10-04T09:34:45.8493972 Faculty of Science and Engineering School of Engineering and Applied Sciences - Chemical Engineering Brittany L. Oliva-Chatelain 1 Andrew Barron 0000-0002-2018-8288 2 0030359-05102016094932.pdf oliva-chatelain2016.pdf 2016-10-05T09:49:32.2600000 Output 1019880 application/pdf Accepted Manuscript true 2016-10-05T00:00:00.0000000 false |
title |
The effect of concentration and post-deposition annealing on silica coated germanium quantum dot thin films grown by vertical deposition |
spellingShingle |
The effect of concentration and post-deposition annealing on silica coated germanium quantum dot thin films grown by vertical deposition Andrew Barron |
title_short |
The effect of concentration and post-deposition annealing on silica coated germanium quantum dot thin films grown by vertical deposition |
title_full |
The effect of concentration and post-deposition annealing on silica coated germanium quantum dot thin films grown by vertical deposition |
title_fullStr |
The effect of concentration and post-deposition annealing on silica coated germanium quantum dot thin films grown by vertical deposition |
title_full_unstemmed |
The effect of concentration and post-deposition annealing on silica coated germanium quantum dot thin films grown by vertical deposition |
title_sort |
The effect of concentration and post-deposition annealing on silica coated germanium quantum dot thin films grown by vertical deposition |
author_id_str_mv |
92e452f20936d688d36f91c78574241d |
author_id_fullname_str_mv |
92e452f20936d688d36f91c78574241d_***_Andrew Barron |
author |
Andrew Barron |
author2 |
Brittany L. Oliva-Chatelain Andrew Barron |
format |
Journal article |
container_title |
Main Group Chemistry |
container_volume |
15 |
container_issue |
3 |
container_start_page |
275 |
publishDate |
2016 |
institution |
Swansea University |
issn |
1745-1167 |
doi_str_mv |
10.3233/MGC-160207 |
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Faculty of Science and Engineering |
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Faculty of Science and Engineering |
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facultyofscienceandengineering |
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Faculty of Science and Engineering |
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School of Engineering and Applied Sciences - Chemical Engineering{{{_:::_}}}Faculty of Science and Engineering{{{_:::_}}}School of Engineering and Applied Sciences - Chemical Engineering |
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description |
Thin films have been grown using silica coated germanium quantum dot (Ge@SiO2) nanoparticles (NP) as well as their phosphorus-doped analogues (P-Ge@SiO2). The Ge quantum dots (QDs) were coated through the seeding of Stöber particles. The film thickness and uniformity were investigated using aqueous solutions at a range of dilutions from the as-prepared solutions. The films have been characterized by SEM, XRD, and I/V measurements of test solar cells using doped n-type Si substrates. While the films were relatively compact they are actually made of large plaques of particles rather than a continuous layer, and the film thickness showed little significant variation with concentration for the Ge@SiO2 films; although a more usual trend was observed for the P-Ge@SiO2 films. Films grown using a solution 1/4 of the maximum concentration provided the highest solar cell efficiency. Thermal annealing of the films prior to deposition of the front and back contacts enabled a doubling in the cell efficiency, but did not show any marked increase in the density or crystallinity of the films. |
published_date |
2016-09-15T03:37:01Z |
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1763751620830560256 |
score |
11.021648 |