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Modifying the Interface Edge to Control the Electrical Transport Properties of Nanocontacts to Nanowires

Alex Lord Orcid Logo, Quentin M. Ramasse, Despoina M. Kepaptsoglou, Jonathan E. Evans, Philip R. Davies, Michael B. Ward, Steve Wilks

Nano Letters, Volume: 17, Issue: 2, Pages: 687 - 694

Swansea University Authors: Alex Lord Orcid Logo, Steve Wilks

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DOI (Published version): 10.1021/acs.nanolett.6b03699

Abstract

Selecting the electrical properties of nanomaterials is essential if their potential as manufacturable devices is to be reached. Here, we show that the addition or removal of native semiconductor material at the edge of a nanocontact can be used to determine the electrical transport properties of me...

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Published in: Nano Letters
ISSN: 1530-6984 1530-6992
Published: 2017
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URI: https://cronfa.swan.ac.uk/Record/cronfa31528
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spelling 2021-01-14T13:09:18.9542678 v2 31528 2016-12-23 Modifying the Interface Edge to Control the Electrical Transport Properties of Nanocontacts to Nanowires d547bad707e12f5a9f12d4fcbeea87ed 0000-0002-6258-2187 Alex Lord Alex Lord true false 948a547e27d969b7e192b4620688704d Steve Wilks Steve Wilks true false 2016-12-23 EEN Selecting the electrical properties of nanomaterials is essential if their potential as manufacturable devices is to be reached. Here, we show that the addition or removal of native semiconductor material at the edge of a nanocontact can be used to determine the electrical transport properties of metal–nanowire interfaces. While the transport properties of as-grown Au nanocatalyst contacts to semiconductor nanowires are well-studied, there are few techniques that have been explored to modify the electrical behavior. In this work, we use an iterative analytical process that directly correlates multiprobe transport measurements with subsequent aberration-corrected scanning transmission electron microscopy to study the effects of chemical processes that create structural changes at the contact interface edge. A strong metal–support interaction that encapsulates the Au nanocontacts over time, adding ZnO material to the edge region, gives rise to ohmic transport behavior due to the enhanced quantum-mechanical tunneling path. Removal of the extraneous material at the Au–nanowire interface eliminates the edge-tunneling path, producing a range of transport behavior that is dependent on the final interface quality. These results demonstrate chemically driven processes that can be factored into nanowire-device design to select the final properties. Journal Article Nano Letters 17 2 687 694 1530-6984 1530-6992 Nanowires; electrical contacts; tunneling edge; effect aberration-corrected scanning transmission electron microscopy; strong metal−support interaction; ZnO 8 2 2017 2017-02-08 10.1021/acs.nanolett.6b03699 COLLEGE NANME Engineering COLLEGE CODE EEN Swansea University RCUK, EP/K504002/1 2021-01-14T13:09:18.9542678 2016-12-23T09:52:06.3178327 Faculty of Science and Engineering School of Engineering and Applied Sciences - Uncategorised Alex Lord 0000-0002-6258-2187 1 Quentin M. Ramasse 2 Despoina M. Kepaptsoglou 3 Jonathan E. Evans 4 Philip R. Davies 5 Michael B. Ward 6 Steve Wilks 7 0031528-02062017141432.pdf lord2017.pdf 2017-06-02T14:14:32.3730000 Output 4200101 application/pdf Version of Record true This is an open access article published under a Creative Commons Attribution (CC-BY) License. true eng https://pubs.acs.org/page/policy/authorchoice_ccby_termsofuse.html
title Modifying the Interface Edge to Control the Electrical Transport Properties of Nanocontacts to Nanowires
spellingShingle Modifying the Interface Edge to Control the Electrical Transport Properties of Nanocontacts to Nanowires
Alex Lord
Steve Wilks
title_short Modifying the Interface Edge to Control the Electrical Transport Properties of Nanocontacts to Nanowires
title_full Modifying the Interface Edge to Control the Electrical Transport Properties of Nanocontacts to Nanowires
title_fullStr Modifying the Interface Edge to Control the Electrical Transport Properties of Nanocontacts to Nanowires
title_full_unstemmed Modifying the Interface Edge to Control the Electrical Transport Properties of Nanocontacts to Nanowires
title_sort Modifying the Interface Edge to Control the Electrical Transport Properties of Nanocontacts to Nanowires
author_id_str_mv d547bad707e12f5a9f12d4fcbeea87ed
948a547e27d969b7e192b4620688704d
author_id_fullname_str_mv d547bad707e12f5a9f12d4fcbeea87ed_***_Alex Lord
948a547e27d969b7e192b4620688704d_***_Steve Wilks
author Alex Lord
Steve Wilks
author2 Alex Lord
Quentin M. Ramasse
Despoina M. Kepaptsoglou
Jonathan E. Evans
Philip R. Davies
Michael B. Ward
Steve Wilks
format Journal article
container_title Nano Letters
container_volume 17
container_issue 2
container_start_page 687
publishDate 2017
institution Swansea University
issn 1530-6984
1530-6992
doi_str_mv 10.1021/acs.nanolett.6b03699
college_str Faculty of Science and Engineering
hierarchytype
hierarchy_top_id facultyofscienceandengineering
hierarchy_top_title Faculty of Science and Engineering
hierarchy_parent_id facultyofscienceandengineering
hierarchy_parent_title Faculty of Science and Engineering
department_str School of Engineering and Applied Sciences - Uncategorised{{{_:::_}}}Faculty of Science and Engineering{{{_:::_}}}School of Engineering and Applied Sciences - Uncategorised
document_store_str 1
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description Selecting the electrical properties of nanomaterials is essential if their potential as manufacturable devices is to be reached. Here, we show that the addition or removal of native semiconductor material at the edge of a nanocontact can be used to determine the electrical transport properties of metal–nanowire interfaces. While the transport properties of as-grown Au nanocatalyst contacts to semiconductor nanowires are well-studied, there are few techniques that have been explored to modify the electrical behavior. In this work, we use an iterative analytical process that directly correlates multiprobe transport measurements with subsequent aberration-corrected scanning transmission electron microscopy to study the effects of chemical processes that create structural changes at the contact interface edge. A strong metal–support interaction that encapsulates the Au nanocontacts over time, adding ZnO material to the edge region, gives rise to ohmic transport behavior due to the enhanced quantum-mechanical tunneling path. Removal of the extraneous material at the Au–nanowire interface eliminates the edge-tunneling path, producing a range of transport behavior that is dependent on the final interface quality. These results demonstrate chemically driven processes that can be factored into nanowire-device design to select the final properties.
published_date 2017-02-08T03:38:32Z
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score 11.021648

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