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A fast power loss calculation method for long real time thermal simulation of IGBT modules for a three-phase inverter system

Z. Zhou, M. S. Khanniche, P. Igic, S. T. Kong, M. Towers, P. A. Mawby, Zhongfu Zhou Orcid Logo

International Journal of Numerical Modelling: Electronic Networks, Devices and Fields, Volume: 19, Issue: 1, Pages: 33 - 46

Swansea University Author: Zhongfu Zhou Orcid Logo

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DOI (Published version): 10.1002/jnm.597

Abstract

A fast power losses calculation method for long real time thermal simulation of IGBT module for a three-phase inverter system is presented in the paper. average model of motor and inverter combined with lookup table method has been proposed to speed-up the electro-thermal simulation of 10 mins opera...

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Published in: International Journal of Numerical Modelling: Electronic Networks, Devices and Fields
ISSN: 0894-3370 1099-1204
Published: 2005
Online Access: Check full text

URI: https://cronfa.swan.ac.uk/Record/cronfa35022
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Abstract: A fast power losses calculation method for long real time thermal simulation of IGBT module for a three-phase inverter system is presented in the paper. average model of motor and inverter combined with lookup table method has been proposed to speed-up the electro-thermal simulation of 10 mins operation. This allows the inverter system to be simulated predicting the effective voltages and currents whilst using large time-step. An average power losses is calculated during each clock period, using a pre-defined look-up table, which stores the switching and on-state losses generated by either direct measurement or automatically based upon compact models for the semiconductor devices. This simulation methodology brings together accurate models of the electrical systems performance, state of the art-device compact models and a realistic simulation of the thermal performance in a usable period of CPU time and is suitable for a long real time thermal simulation of inverter power devices with arbitrary load. Thermal simulation results show that with the same IGBT characteristics applied, the proposed model can give the almost same thermal performance compared to the full physically based device modelling approach
College: College of Engineering
Issue: 1
Start Page: 33
End Page: 46