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One-step growth of thin film SnS with large grains using MOCVD
Science and Technology of Advanced Materials, Volume: 19, Issue: 1, Pages: 153 - 159
Swansea University Authors: Andrew Clayton , Cecile Charbonneau , Stuart Irvine , Wing Chung Tsoi
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DOI (Published version): 10.1080/14686996.2018.1428478
Thin film tin sulphide (SnS) films were produced with grain sizes greater than 1 μm using a one-step metal organic chemical vapour deposition process. Tin –doped indium oxide (ITO) was used as the substrate, having a similar work function to molybdenum typically used as the back contact, but with po...
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Taylor and Francis
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Thin film tin sulphide (SnS) films were produced with grain sizes greater than 1 μm using a one-step metal organic chemical vapour deposition process. Tin –doped indium oxide (ITO) was used as the substrate, having a similar work function to molybdenum typically used as the back contact, but with potential use of its transparency for bifacial illumination. Tetraethyltin and ditertiarybutylsulphide were used as precursors with process temperatures 430 -470°C to promote film growth with large grains. The film stoichiometry was controlled by varying the precursor partial pressure ratios and characterised with energy dispersive X-ray spectroscopy to optimise the SnS composition. X-ray diffraction and Raman spectroscopy were used to determine the phases that were present in the film and revealed that small amounts of ottemannite Sn2S3 was present when SnS was deposited on to the ITO using optimised growth parameters. Interaction at the SnS/ITO interface to form Sn2S3 was deduced to have resulted for all growth conditions.
Supplementary data available via 10.5281/zenodo.1043466
Thin film SnS, photovoltaics, metal organic chemical vapour deposition
Faculty of Science and Engineering