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High‐Performance n‐ and p‐Type Field‐Effect Transistors Based on Hybridly Surface‐Passivated Colloidal PbS Nanosheets

Mohammad Mehdi Ramin Moayed, Thomas Bielewicz, Heshmat Noei, Andreas Stierle, Christian Klinke Orcid Logo

Advanced Functional Materials, Volume: 28, Issue: 19, Start page: 1706815

Swansea University Author: Christian Klinke Orcid Logo

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DOI (Published version): 10.1002/adfm.201706815

Abstract

Colloidally synthesized nanomaterials are among the promising candidates for future electronic devices due to their simplicity and the inexpensiveness of their production. Specifically, colloidal nanosheets are of great interest since they are conveniently producible through the colloidal approach w...

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Published in: Advanced Functional Materials
ISSN: 1616-301X 1616-3028
Published: Wiley 2018
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URI: https://cronfa.swan.ac.uk/Record/cronfa39354
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first_indexed 2018-04-09T19:32:11Z
last_indexed 2020-09-24T03:00:10Z
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spelling 2020-09-23T15:41:09.0175514 v2 39354 2018-04-09 High‐Performance n‐ and p‐Type Field‐Effect Transistors Based on Hybridly Surface‐Passivated Colloidal PbS Nanosheets c10c44238eabfb203111f88a965f5372 0000-0001-8558-7389 Christian Klinke Christian Klinke true false 2018-04-09 CHEM Colloidally synthesized nanomaterials are among the promising candidates for future electronic devices due to their simplicity and the inexpensiveness of their production. Specifically, colloidal nanosheets are of great interest since they are conveniently producible through the colloidal approach while having the advantages of two-dimensionality. In order to employ these materials, according transistor behavior should be adjustable and of high performance. We show that the transistor performance of colloidal lead sulfide nanosheets is tunable by altering the surface passivation, the contact metal, or by exposing them to air. We found that adding halide ions to the synthesis leads to an improvement of the conductivity, the field-effect mobility, and the on/off ratio of these transistors by passivating their surface defects. Superior n-type behavior with a field-effect mobility of 248 cm^2V^-1s^-1 and an on/off ratio of 4×10^6 is achieved. The conductivity of these stripes can be changed from n-type to p-type by altering the contact metal and by adding oxygen to the working environment. As a possible solution for the post-Moore era, realizing new high quality semiconductors such as colloidal materials is crucial. In this respect, our results can provide new insights which helps to accelerate their optimization for potential applications. Journal Article Advanced Functional Materials 28 19 1706815 Wiley 1616-301X 1616-3028 lead sulfide, colloidal nanocrystals, two-dimensional materials, electrical transport, doping, field-effect transistor 1 5 2018 2018-05-01 10.1002/adfm.201706815 COLLEGE NANME Chemistry COLLEGE CODE CHEM Swansea University 2020-09-23T15:41:09.0175514 2018-04-09T13:53:17.7368426 Faculty of Science and Engineering School of Engineering and Applied Sciences - Chemistry Mohammad Mehdi Ramin Moayed 1 Thomas Bielewicz 2 Heshmat Noei 3 Andreas Stierle 4 Christian Klinke 0000-0001-8558-7389 5 0039354-09042018135532.pdf Ramin-Klinke-Manuscript.pdf 2018-04-09T13:55:32.1500000 Output 2358765 application/pdf Accepted Manuscript true 2019-03-25T00:00:00.0000000 true eng
title High‐Performance n‐ and p‐Type Field‐Effect Transistors Based on Hybridly Surface‐Passivated Colloidal PbS Nanosheets
spellingShingle High‐Performance n‐ and p‐Type Field‐Effect Transistors Based on Hybridly Surface‐Passivated Colloidal PbS Nanosheets
Christian Klinke
title_short High‐Performance n‐ and p‐Type Field‐Effect Transistors Based on Hybridly Surface‐Passivated Colloidal PbS Nanosheets
title_full High‐Performance n‐ and p‐Type Field‐Effect Transistors Based on Hybridly Surface‐Passivated Colloidal PbS Nanosheets
title_fullStr High‐Performance n‐ and p‐Type Field‐Effect Transistors Based on Hybridly Surface‐Passivated Colloidal PbS Nanosheets
title_full_unstemmed High‐Performance n‐ and p‐Type Field‐Effect Transistors Based on Hybridly Surface‐Passivated Colloidal PbS Nanosheets
title_sort High‐Performance n‐ and p‐Type Field‐Effect Transistors Based on Hybridly Surface‐Passivated Colloidal PbS Nanosheets
author_id_str_mv c10c44238eabfb203111f88a965f5372
author_id_fullname_str_mv c10c44238eabfb203111f88a965f5372_***_Christian Klinke
author Christian Klinke
author2 Mohammad Mehdi Ramin Moayed
Thomas Bielewicz
Heshmat Noei
Andreas Stierle
Christian Klinke
format Journal article
container_title Advanced Functional Materials
container_volume 28
container_issue 19
container_start_page 1706815
publishDate 2018
institution Swansea University
issn 1616-301X
1616-3028
doi_str_mv 10.1002/adfm.201706815
publisher Wiley
college_str Faculty of Science and Engineering
hierarchytype
hierarchy_top_id facultyofscienceandengineering
hierarchy_top_title Faculty of Science and Engineering
hierarchy_parent_id facultyofscienceandengineering
hierarchy_parent_title Faculty of Science and Engineering
department_str School of Engineering and Applied Sciences - Chemistry{{{_:::_}}}Faculty of Science and Engineering{{{_:::_}}}School of Engineering and Applied Sciences - Chemistry
document_store_str 1
active_str 0
description Colloidally synthesized nanomaterials are among the promising candidates for future electronic devices due to their simplicity and the inexpensiveness of their production. Specifically, colloidal nanosheets are of great interest since they are conveniently producible through the colloidal approach while having the advantages of two-dimensionality. In order to employ these materials, according transistor behavior should be adjustable and of high performance. We show that the transistor performance of colloidal lead sulfide nanosheets is tunable by altering the surface passivation, the contact metal, or by exposing them to air. We found that adding halide ions to the synthesis leads to an improvement of the conductivity, the field-effect mobility, and the on/off ratio of these transistors by passivating their surface defects. Superior n-type behavior with a field-effect mobility of 248 cm^2V^-1s^-1 and an on/off ratio of 4×10^6 is achieved. The conductivity of these stripes can be changed from n-type to p-type by altering the contact metal and by adding oxygen to the working environment. As a possible solution for the post-Moore era, realizing new high quality semiconductors such as colloidal materials is crucial. In this respect, our results can provide new insights which helps to accelerate their optimization for potential applications.
published_date 2018-05-01T03:49:58Z
_version_ 1763752435517489152
score 11.035874

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