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Anomalous Exciton Quenching in Organic Semiconductors in the Low-Yield Limit

Nasim Zarrabi, Aren Yazmaciyan, Paul Meredith, Ivan Kassal, Ardalan Armin

The Journal of Physical Chemistry Letters, Volume: 9, Issue: 20, Pages: 6144 - 6148

Swansea University Author: Ardalan Armin

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DOI (Published version): 10.1021/acs.jpclett.8b02484

Abstract

The dynamics of exciton quenching are critical to the operational performance of organic optoelectronic devices, but their measurement and elucidation remain ongoing challenges. Here, we present a method for quantifying small photoluminescence quenching efficiencies of organic semiconductors under s...

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Published in: The Journal of Physical Chemistry Letters
ISSN: 1948-7185
Published: 2018
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URI: https://cronfa.swan.ac.uk/Record/cronfa44874
first_indexed 2018-10-13T13:18:16Z
last_indexed 2019-01-11T13:59:32Z
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spelling 2019-01-11T09:15:15.0877391 v2 44874 2018-10-13 Anomalous Exciton Quenching in Organic Semiconductors in the Low-Yield Limit 22b270622d739d81e131bec7a819e2fd Ardalan Armin Ardalan Armin true false 2018-10-13 The dynamics of exciton quenching are critical to the operational performance of organic optoelectronic devices, but their measurement and elucidation remain ongoing challenges. Here, we present a method for quantifying small photoluminescence quenching efficiencies of organic semiconductors under steady-state conditions. Exciton quenching efficiencies of three different organic semiconductors, PC70BM, P3HT, and PCDTBT, are measured at different bulk quencher densities under continuous low-irradiance illumination. By implementing a steady-state bulk-quenching model, we determine exciton diffusion lengths for the studied materials. At low quencher densities we find that a secondary quenching mechanism is in effect, which is responsible for approximately 20% of the total quenched excitons. This quenching mechanism is observed in all three studied materials and exhibits quenching volumes on the order of several thousand cubic nanometers. The exact origin of this quenching process is not clear, but it may be indicative of delocalized excitons being quenched prior to thermalization. Journal Article The Journal of Physical Chemistry Letters 9 20 6144 6148 1948-7185 5 10 2018 2018-10-05 10.1021/acs.jpclett.8b02484 COLLEGE NANME COLLEGE CODE Swansea University 2019-01-11T09:15:15.0877391 2018-10-13T09:40:51.2328524 Faculty of Science and Engineering School of Biosciences, Geography and Physics - Physics Nasim Zarrabi 1 Aren Yazmaciyan 2 Paul Meredith 3 Ivan Kassal 4 Ardalan Armin 5 0044874-20122018175645.pdf ManuscriptSubmission.pdf 2018-12-20T17:56:45.8330000 Output 493078 application/pdf Accepted Manuscript true 2019-10-05T00:00:00.0000000 true eng
title Anomalous Exciton Quenching in Organic Semiconductors in the Low-Yield Limit
spellingShingle Anomalous Exciton Quenching in Organic Semiconductors in the Low-Yield Limit
Ardalan Armin
title_short Anomalous Exciton Quenching in Organic Semiconductors in the Low-Yield Limit
title_full Anomalous Exciton Quenching in Organic Semiconductors in the Low-Yield Limit
title_fullStr Anomalous Exciton Quenching in Organic Semiconductors in the Low-Yield Limit
title_full_unstemmed Anomalous Exciton Quenching in Organic Semiconductors in the Low-Yield Limit
title_sort Anomalous Exciton Quenching in Organic Semiconductors in the Low-Yield Limit
author_id_str_mv 22b270622d739d81e131bec7a819e2fd
author_id_fullname_str_mv 22b270622d739d81e131bec7a819e2fd_***_Ardalan Armin
author Ardalan Armin
author2 Nasim Zarrabi
Aren Yazmaciyan
Paul Meredith
Ivan Kassal
Ardalan Armin
format Journal article
container_title The Journal of Physical Chemistry Letters
container_volume 9
container_issue 20
container_start_page 6144
publishDate 2018
institution Swansea University
issn 1948-7185
doi_str_mv 10.1021/acs.jpclett.8b02484
college_str Faculty of Science and Engineering
hierarchytype
hierarchy_top_id facultyofscienceandengineering
hierarchy_top_title Faculty of Science and Engineering
hierarchy_parent_id facultyofscienceandengineering
hierarchy_parent_title Faculty of Science and Engineering
department_str School of Biosciences, Geography and Physics - Physics{{{_:::_}}}Faculty of Science and Engineering{{{_:::_}}}School of Biosciences, Geography and Physics - Physics
document_store_str 1
active_str 0
description The dynamics of exciton quenching are critical to the operational performance of organic optoelectronic devices, but their measurement and elucidation remain ongoing challenges. Here, we present a method for quantifying small photoluminescence quenching efficiencies of organic semiconductors under steady-state conditions. Exciton quenching efficiencies of three different organic semiconductors, PC70BM, P3HT, and PCDTBT, are measured at different bulk quencher densities under continuous low-irradiance illumination. By implementing a steady-state bulk-quenching model, we determine exciton diffusion lengths for the studied materials. At low quencher densities we find that a secondary quenching mechanism is in effect, which is responsible for approximately 20% of the total quenched excitons. This quenching mechanism is observed in all three studied materials and exhibits quenching volumes on the order of several thousand cubic nanometers. The exact origin of this quenching process is not clear, but it may be indicative of delocalized excitons being quenched prior to thermalization.
published_date 2018-10-05T07:21:33Z
_version_ 1829176757139275776
score 11.057796

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