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Localized effect of PbI2 excess in perovskite solar cells probed by high-resolution chemical–optoelectronic mapping

Jérémy Barbé, Michael Newman, Samuele Lilliu, Vikas Kumar, Harrison Ka Hin Lee, Cécile Charbonneau, Cornelia Rodenburg, David Lidzey, Wing Chung Tsoi, Cecile Charbonneau Orcid Logo, Wing Chung Tsoi Orcid Logo

Journal of Materials Chemistry A, Volume: 6, Issue: 45, Pages: 23010 - 23018

Swansea University Authors: Cecile Charbonneau Orcid Logo, Wing Chung Tsoi Orcid Logo

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DOI (Published version): 10.1039/C8TA09536A

Abstract

We report the laser irradiation of CH3NH3PbI3 solar cells to generate and control localized PbI2 degradation product. We show that by tuning the laser power and illumination time, we can controllably form a local excess of PbI2. High-resolution advanced multi-mapping techniques are used to highlight...

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Published in: Journal of Materials Chemistry A
ISSN: 2050-7488 2050-7496
Published: 2018
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URI: https://cronfa.swan.ac.uk/Record/cronfa46012
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first_indexed 2018-11-21T14:19:42Z
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spelling 2019-01-14T16:19:29.1068987 v2 46012 2018-11-21 Localized effect of PbI2 excess in perovskite solar cells probed by high-resolution chemical–optoelectronic mapping 4dc059714847cb22ed922ab058950560 0000-0001-9887-2007 Cecile Charbonneau Cecile Charbonneau true false 7e5f541df6635a9a8e1a579ff2de5d56 0000-0003-3836-5139 Wing Chung Tsoi Wing Chung Tsoi true false 2018-11-21 MTLS We report the laser irradiation of CH3NH3PbI3 solar cells to generate and control localized PbI2 degradation product. We show that by tuning the laser power and illumination time, we can controllably form a local excess of PbI2. High-resolution advanced multi-mapping techniques are used to highlight the effect of PbI2 on the photophysical and photoelectrical properties in a complete perovskite device. Whereas a thick PbI2 film at the perovskite/hole transport layer interface has a detrimental effect on the photocurrent and photoluminescence, a thin PbI2 film (<20 nm) leads to a significant photocurrent increase, which is ascribed to the passivation of non-radiative defects and reduced charge recombination at the interface. Our findings reveal that laser irradiation is a new approach to understand the effect of PbI2 surface layers and potentially offers a means to passivate trap states and improve PV properties of perovskite devices. Journal Article Journal of Materials Chemistry A 6 45 23010 23018 2050-7488 2050-7496 31 12 2018 2018-12-31 10.1039/C8TA09536A COLLEGE NANME Materials Science and Engineering COLLEGE CODE MTLS Swansea University 2019-01-14T16:19:29.1068987 2018-11-21T09:48:01.4714338 Faculty of Science and Engineering School of Engineering and Applied Sciences - Materials Science and Engineering Jérémy Barbé 1 Michael Newman 2 Samuele Lilliu 3 Vikas Kumar 4 Harrison Ka Hin Lee 5 Cécile Charbonneau 6 Cornelia Rodenburg 7 David Lidzey 8 Wing Chung Tsoi 9 Cecile Charbonneau 0000-0001-9887-2007 10 Wing Chung Tsoi 0000-0003-3836-5139 11 0046012-21112018112800.pdf barbe2018(3)v2.pdf 2018-11-21T11:28:00.3530000 Output 1914575 application/pdf Accepted Manuscript true 2019-10-29T00:00:00.0000000 true eng
title Localized effect of PbI2 excess in perovskite solar cells probed by high-resolution chemical–optoelectronic mapping
spellingShingle Localized effect of PbI2 excess in perovskite solar cells probed by high-resolution chemical–optoelectronic mapping
Cecile Charbonneau
Wing Chung Tsoi
title_short Localized effect of PbI2 excess in perovskite solar cells probed by high-resolution chemical–optoelectronic mapping
title_full Localized effect of PbI2 excess in perovskite solar cells probed by high-resolution chemical–optoelectronic mapping
title_fullStr Localized effect of PbI2 excess in perovskite solar cells probed by high-resolution chemical–optoelectronic mapping
title_full_unstemmed Localized effect of PbI2 excess in perovskite solar cells probed by high-resolution chemical–optoelectronic mapping
title_sort Localized effect of PbI2 excess in perovskite solar cells probed by high-resolution chemical–optoelectronic mapping
author_id_str_mv 4dc059714847cb22ed922ab058950560
7e5f541df6635a9a8e1a579ff2de5d56
author_id_fullname_str_mv 4dc059714847cb22ed922ab058950560_***_Cecile Charbonneau
7e5f541df6635a9a8e1a579ff2de5d56_***_Wing Chung Tsoi
author Cecile Charbonneau
Wing Chung Tsoi
author2 Jérémy Barbé
Michael Newman
Samuele Lilliu
Vikas Kumar
Harrison Ka Hin Lee
Cécile Charbonneau
Cornelia Rodenburg
David Lidzey
Wing Chung Tsoi
Cecile Charbonneau
Wing Chung Tsoi
format Journal article
container_title Journal of Materials Chemistry A
container_volume 6
container_issue 45
container_start_page 23010
publishDate 2018
institution Swansea University
issn 2050-7488
2050-7496
doi_str_mv 10.1039/C8TA09536A
college_str Faculty of Science and Engineering
hierarchytype
hierarchy_top_id facultyofscienceandengineering
hierarchy_top_title Faculty of Science and Engineering
hierarchy_parent_id facultyofscienceandengineering
hierarchy_parent_title Faculty of Science and Engineering
department_str School of Engineering and Applied Sciences - Materials Science and Engineering{{{_:::_}}}Faculty of Science and Engineering{{{_:::_}}}School of Engineering and Applied Sciences - Materials Science and Engineering
document_store_str 1
active_str 0
description We report the laser irradiation of CH3NH3PbI3 solar cells to generate and control localized PbI2 degradation product. We show that by tuning the laser power and illumination time, we can controllably form a local excess of PbI2. High-resolution advanced multi-mapping techniques are used to highlight the effect of PbI2 on the photophysical and photoelectrical properties in a complete perovskite device. Whereas a thick PbI2 film at the perovskite/hole transport layer interface has a detrimental effect on the photocurrent and photoluminescence, a thin PbI2 film (<20 nm) leads to a significant photocurrent increase, which is ascribed to the passivation of non-radiative defects and reduced charge recombination at the interface. Our findings reveal that laser irradiation is a new approach to understand the effect of PbI2 surface layers and potentially offers a means to passivate trap states and improve PV properties of perovskite devices.
published_date 2018-12-31T03:57:41Z
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score 11.016235

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