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Modifying the electrical properties of graphene by reversible point-ripple formation

Mona M.M. Alyobi, Chris J. Barnett, Paul Rees Orcid Logo, Richard Cobley Orcid Logo

Carbon, Volume: 143, Pages: 762 - 768

Swansea University Authors: Paul Rees Orcid Logo, Richard Cobley Orcid Logo

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DOI (Published version): 10.1016/j.carbon.2018.11.076

Abstract

Strain, ripples and wrinkles in graphene reduce the charge-carrier mobility and alter the electronic behaviour. In few-layer graphene the anisotropy between the in-plane and cross-plane resistivity is altered and a band gap can be opened up. Here we demonstrate a method to reversibly induce point ri...

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Published in: Carbon
ISSN: 0008-6223
Published: Elsevier BV 2019
Online Access: Check full text

URI: https://cronfa.swan.ac.uk/Record/cronfa46153
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Abstract: Strain, ripples and wrinkles in graphene reduce the charge-carrier mobility and alter the electronic behaviour. In few-layer graphene the anisotropy between the in-plane and cross-plane resistivity is altered and a band gap can be opened up. Here we demonstrate a method to reversibly induce point ripples in electrically isolated few-layer graphene with the ability to select the number of layers used for transport measurement down to single layer. During ripple formation the in-plane and cross-plane sheet resistances increase by up to 78% and 699% respectively, confirming that microscopic corrugation changes can solely account for graphene's non-ideal charge-carrier mobility. The method can also count the number of layers in few-layer graphene and is complimentary to Raman spectroscopy and atomic force microscopy when n ≤ 4. Understanding these changes is crucial to realising practical oscillators, nano-electromechanical systems and flexible electronics with graphene.
College: Faculty of Science and Engineering
Funders: UKRI, grant number EP/N013506/1
Start Page: 762
End Page: 768

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