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SnS2 quantum dots: facile synthesis, properties and applications in ultraviolet photodetector

Y Li, L Tang, R Li, J Xiang, K.S Teng, S.P Lau, Vincent Teng Orcid Logo

Chinese Physics B, Volume: 28, Issue: 3, Start page: 037801

Swansea University Author: Vincent Teng Orcid Logo

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DOI (Published version): 10.1088/1674-1056/28/3/037801

Abstract

Tin sulfide quantum dots (SnS2 QDs) are n-type wide band gap semiconductor. They exhibit a high optical absorption coefficient and strong photoconductive property in the ultraviolet and visible regions. Therefore, they have been found to have many potential applications, such as gas sensors, resisto...

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Published in: Chinese Physics B
ISSN: 1674-1056
Published: 2019
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URI: https://cronfa.swan.ac.uk/Record/cronfa48158
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first_indexed 2019-01-14T14:01:32Z
last_indexed 2019-02-26T13:57:42Z
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spelling 2019-02-26T10:44:44.6391378 v2 48158 2019-01-14 SnS2 quantum dots: facile synthesis, properties and applications in ultraviolet photodetector 98f529f56798da1ba3e6e93d2817c114 0000-0003-4325-8573 Vincent Teng Vincent Teng true false 2019-01-14 EEEG Tin sulfide quantum dots (SnS2 QDs) are n-type wide band gap semiconductor. They exhibit a high optical absorption coefficient and strong photoconductive property in the ultraviolet and visible regions. Therefore, they have been found to have many potential applications, such as gas sensors, resistors, photodetectors, photocatalysts, and solar cells. However, the existing preparation methods for SnS2 QDs are complicated and require a high temperature and high pressure environment; hence they are unsuitable for large-scale industrial production. An effective method for the preparation of monodispersed SnS2 QDs at normal temperature and pressure will be discussed in this paper. The method is facile, green, and low-cost. In this work, the structure, morphology, optical, electrical, and photoelectric properties of SnS2 QDs are studied. The synthesized SnS2 QDs are homogeneous in size and exhibit good photoelectric performance. A photoelectric detector based on the SnS2 QDs is fabricated and its J-V and C-V characteristics are also studied. The detector responds under λ=365 nm light irradiation and reverse bias voltage. Its detectivity approximately stabilizes at 1011 Jones at room temperature. These results show the possible use of SnS2 QDs in photodetectors. Journal Article Chinese Physics B 28 3 037801 1674-1056 SnS2, quantum dots, photoelectric properties, photodetector 31 12 2019 2019-12-31 10.1088/1674-1056/28/3/037801 COLLEGE NANME Electronic and Electrical Engineering COLLEGE CODE EEEG Swansea University 2019-02-26T10:44:44.6391378 2019-01-14T09:54:17.8503098 Faculty of Science and Engineering School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering Y Li 1 L Tang 2 R Li 3 J Xiang 4 K.S Teng 5 S.P Lau 6 Vincent Teng 0000-0003-4325-8573 7 0048158-14012019095521.pdf li2019.pdf 2019-01-14T09:55:21.7100000 Output 1019164 application/pdf Accepted Manuscript true 2020-01-31T00:00:00.0000000 true eng
title SnS2 quantum dots: facile synthesis, properties and applications in ultraviolet photodetector
spellingShingle SnS2 quantum dots: facile synthesis, properties and applications in ultraviolet photodetector
Vincent Teng
title_short SnS2 quantum dots: facile synthesis, properties and applications in ultraviolet photodetector
title_full SnS2 quantum dots: facile synthesis, properties and applications in ultraviolet photodetector
title_fullStr SnS2 quantum dots: facile synthesis, properties and applications in ultraviolet photodetector
title_full_unstemmed SnS2 quantum dots: facile synthesis, properties and applications in ultraviolet photodetector
title_sort SnS2 quantum dots: facile synthesis, properties and applications in ultraviolet photodetector
author_id_str_mv 98f529f56798da1ba3e6e93d2817c114
author_id_fullname_str_mv 98f529f56798da1ba3e6e93d2817c114_***_Vincent Teng
author Vincent Teng
author2 Y Li
L Tang
R Li
J Xiang
K.S Teng
S.P Lau
Vincent Teng
format Journal article
container_title Chinese Physics B
container_volume 28
container_issue 3
container_start_page 037801
publishDate 2019
institution Swansea University
issn 1674-1056
doi_str_mv 10.1088/1674-1056/28/3/037801
college_str Faculty of Science and Engineering
hierarchytype
hierarchy_top_id facultyofscienceandengineering
hierarchy_top_title Faculty of Science and Engineering
hierarchy_parent_id facultyofscienceandengineering
hierarchy_parent_title Faculty of Science and Engineering
department_str School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering{{{_:::_}}}Faculty of Science and Engineering{{{_:::_}}}School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering
document_store_str 1
active_str 0
description Tin sulfide quantum dots (SnS2 QDs) are n-type wide band gap semiconductor. They exhibit a high optical absorption coefficient and strong photoconductive property in the ultraviolet and visible regions. Therefore, they have been found to have many potential applications, such as gas sensors, resistors, photodetectors, photocatalysts, and solar cells. However, the existing preparation methods for SnS2 QDs are complicated and require a high temperature and high pressure environment; hence they are unsuitable for large-scale industrial production. An effective method for the preparation of monodispersed SnS2 QDs at normal temperature and pressure will be discussed in this paper. The method is facile, green, and low-cost. In this work, the structure, morphology, optical, electrical, and photoelectric properties of SnS2 QDs are studied. The synthesized SnS2 QDs are homogeneous in size and exhibit good photoelectric performance. A photoelectric detector based on the SnS2 QDs is fabricated and its J-V and C-V characteristics are also studied. The detector responds under λ=365 nm light irradiation and reverse bias voltage. Its detectivity approximately stabilizes at 1011 Jones at room temperature. These results show the possible use of SnS2 QDs in photodetectors.
published_date 2019-12-31T03:58:27Z
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score 11.017797

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