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In2S3 Quantum Dots: Preparation, Properties and Optoelectronic Application

Rujie Li, Libin Tang, Qing Zhao, Thuc Hue Ly, Kar Seng Teng, Yao Li, Yanbo Hu, Chang Shu, Shu Ping Lau, Vincent Teng Orcid Logo

Nanoscale Research Letters, Volume: 14, Issue: 1

Swansea University Author: Vincent Teng Orcid Logo

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DOI (Published version): 10.1186/s11671-019-2992-0

Abstract

Low-dimensional semiconductors exhibit remarkable performances in many device applications because of their unique physical, electrical, and optical properties. In this paper, we report a novel and facile method to synthesize In2S3 quantum dots (QDs) at atmospheric pressure and room temperature cond...

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Published in: Nanoscale Research Letters
ISSN: 1931-7573 1556-276X
Published: 2019
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URI: https://cronfa.swan.ac.uk/Record/cronfa50385
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first_indexed 2019-05-16T14:33:46Z
last_indexed 2019-07-18T21:35:17Z
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spelling 2019-07-18T15:22:27.3662823 v2 50385 2019-05-16 In2S3 Quantum Dots: Preparation, Properties and Optoelectronic Application 98f529f56798da1ba3e6e93d2817c114 0000-0003-4325-8573 Vincent Teng Vincent Teng true false 2019-05-16 EEEG Low-dimensional semiconductors exhibit remarkable performances in many device applications because of their unique physical, electrical, and optical properties. In this paper, we report a novel and facile method to synthesize In2S3 quantum dots (QDs) at atmospheric pressure and room temperature conditions. This involves the reaction of sodium sulfide with indium chloride and using sodium dodecyl sulfate (SDS) as a surfactant to produce In2S3 QDs with excellent crystal quality. The properties of the as-prepared In2S3 QDs were investigated and photodetectors based on the QDs were also fabricated to study the use of the material in optoelectronic applications. The results show that the detectivity of the device stabilizes at ~ 1013 Jones at room temperature under 365 nm ultraviolet light irradiation at reverse bias voltage. Journal Article Nanoscale Research Letters 14 1 1931-7573 1556-276X In2S3 QDs, Preparation, Properties, Optoelectronic application 31 12 2019 2019-12-31 10.1186/s11671-019-2992-0 COLLEGE NANME Electronic and Electrical Engineering COLLEGE CODE EEEG Swansea University 2019-07-18T15:22:27.3662823 2019-05-16T09:08:41.1962109 Faculty of Science and Engineering School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering Rujie Li 1 Libin Tang 2 Qing Zhao 3 Thuc Hue Ly 4 Kar Seng Teng 5 Yao Li 6 Yanbo Hu 7 Chang Shu 8 Shu Ping Lau 9 Vincent Teng 0000-0003-4325-8573 10 0050385-16052019091152.pdf li2019(4).pdf 2019-05-16T09:11:52.6800000 Output 7269593 application/pdf Version of Record true 2019-05-16T00:00:00.0000000 Distributed under the terms of a Creative Commons Attribution (CC-BY-4.0) true eng
title In2S3 Quantum Dots: Preparation, Properties and Optoelectronic Application
spellingShingle In2S3 Quantum Dots: Preparation, Properties and Optoelectronic Application
Vincent Teng
title_short In2S3 Quantum Dots: Preparation, Properties and Optoelectronic Application
title_full In2S3 Quantum Dots: Preparation, Properties and Optoelectronic Application
title_fullStr In2S3 Quantum Dots: Preparation, Properties and Optoelectronic Application
title_full_unstemmed In2S3 Quantum Dots: Preparation, Properties and Optoelectronic Application
title_sort In2S3 Quantum Dots: Preparation, Properties and Optoelectronic Application
author_id_str_mv 98f529f56798da1ba3e6e93d2817c114
author_id_fullname_str_mv 98f529f56798da1ba3e6e93d2817c114_***_Vincent Teng
author Vincent Teng
author2 Rujie Li
Libin Tang
Qing Zhao
Thuc Hue Ly
Kar Seng Teng
Yao Li
Yanbo Hu
Chang Shu
Shu Ping Lau
Vincent Teng
format Journal article
container_title Nanoscale Research Letters
container_volume 14
container_issue 1
publishDate 2019
institution Swansea University
issn 1931-7573
1556-276X
doi_str_mv 10.1186/s11671-019-2992-0
college_str Faculty of Science and Engineering
hierarchytype
hierarchy_top_id facultyofscienceandengineering
hierarchy_top_title Faculty of Science and Engineering
hierarchy_parent_id facultyofscienceandengineering
hierarchy_parent_title Faculty of Science and Engineering
department_str School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering{{{_:::_}}}Faculty of Science and Engineering{{{_:::_}}}School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering
document_store_str 1
active_str 0
description Low-dimensional semiconductors exhibit remarkable performances in many device applications because of their unique physical, electrical, and optical properties. In this paper, we report a novel and facile method to synthesize In2S3 quantum dots (QDs) at atmospheric pressure and room temperature conditions. This involves the reaction of sodium sulfide with indium chloride and using sodium dodecyl sulfate (SDS) as a surfactant to produce In2S3 QDs with excellent crystal quality. The properties of the as-prepared In2S3 QDs were investigated and photodetectors based on the QDs were also fabricated to study the use of the material in optoelectronic applications. The results show that the detectivity of the device stabilizes at ~ 1013 Jones at room temperature under 365 nm ultraviolet light irradiation at reverse bias voltage.
published_date 2019-12-31T04:01:49Z
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score 11.012678

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