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The voltage-dependent manipulation of few-layer graphene with a scanning tunneling microscopy tip

Mona M. Alyobi, Christopher Barnett, Cyrill B. Muratov, Vitaly Moroz Orcid Logo, Richard Cobley Orcid Logo

Carbon, Volume: 163, Pages: 379 - 384

Swansea University Authors: Christopher Barnett, Vitaly Moroz Orcid Logo, Richard Cobley Orcid Logo

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DOI (Published version): 10.1016/j.carbon.2020.03.046

Abstract

Strain and deformation alter the electronic properties of graphene, offering the possibility to control its transport behavior. The tip of a scanning tunneling microscope is an ideal tool to mechanically perturb the system locally while simultaneously measuring the electronic response. Here we stret...

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Published in: Carbon
ISSN: 0008-6223
Published: Elsevier BV 2020
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URI: https://cronfa.swan.ac.uk/Record/cronfa53851
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spelling 2021-03-15T12:09:23.0162641 v2 53851 2020-03-23 The voltage-dependent manipulation of few-layer graphene with a scanning tunneling microscopy tip 3cc4b7c0dcf59d3ff31f9f13b0e5a831 Christopher Barnett Christopher Barnett true false 160965ff7131686ab9263d39886c8c1a 0000-0003-3302-8782 Vitaly Moroz Vitaly Moroz true false 2ce7e1dd9006164425415a35fa452494 0000-0003-4833-8492 Richard Cobley Richard Cobley true false 2020-03-23 FGSEN Strain and deformation alter the electronic properties of graphene, offering the possibility to control its transport behavior. The tip of a scanning tunneling microscope is an ideal tool to mechanically perturb the system locally while simultaneously measuring the electronic response. Here we stretch few- and multi-layer graphene membranes supported on SiO2 substrates and suspended over voids. An automated approach-retraction method stably traces the graphene deflection hysteresis curve hundreds of times across four samples, measuring the voltage-dependent stretching, from which we extract the hysteresis width. Using a force-balance model, we are able to reproduce the voltage-dependent hysteretic graphene extension behavior. We directly observe a voltage-dependent interplay where electrostatic forces dominate at high voltage and van der Waals forces at low voltage. The relative contribution of each force is dependent on the graphene and tunneling resistance, giving rise to different observed voltage-dependent behavior between samples. Understanding the voltage dependence of these forces impacts scanning probe measurement of 2D materials and informs oscillating graphene device design where similar forces act from the side walls of cavities, leading towards strain engineering of layered 2D systems. Journal Article Carbon 163 379 384 Elsevier BV 0008-6223 15 8 2020 2020-08-15 10.1016/j.carbon.2020.03.046 COLLEGE NANME Science and Engineering - Faculty COLLEGE CODE FGSEN Swansea University 2021-03-15T12:09:23.0162641 2020-03-23T13:18:21.9813375 Faculty of Science and Engineering School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering Mona M. Alyobi 1 Christopher Barnett 2 Cyrill B. Muratov 3 Vitaly Moroz 0000-0003-3302-8782 4 Richard Cobley 0000-0003-4833-8492 5 53851__16935__bf3a99545ee247b6830dd13a010584d6.pdf 53851.pdf 2020-03-27T08:26:09.2313307 Output 973207 application/pdf Accepted Manuscript true 2021-03-24T00:00:00.0000000 © 2020. This manuscript version is made available under the CC-BY-NC-ND 4.0 license. true eng http://creativecommons.org/licenses/by-nc-nd/4.0/
title The voltage-dependent manipulation of few-layer graphene with a scanning tunneling microscopy tip
spellingShingle The voltage-dependent manipulation of few-layer graphene with a scanning tunneling microscopy tip
Christopher Barnett
Vitaly Moroz
Richard Cobley
title_short The voltage-dependent manipulation of few-layer graphene with a scanning tunneling microscopy tip
title_full The voltage-dependent manipulation of few-layer graphene with a scanning tunneling microscopy tip
title_fullStr The voltage-dependent manipulation of few-layer graphene with a scanning tunneling microscopy tip
title_full_unstemmed The voltage-dependent manipulation of few-layer graphene with a scanning tunneling microscopy tip
title_sort The voltage-dependent manipulation of few-layer graphene with a scanning tunneling microscopy tip
author_id_str_mv 3cc4b7c0dcf59d3ff31f9f13b0e5a831
160965ff7131686ab9263d39886c8c1a
2ce7e1dd9006164425415a35fa452494
author_id_fullname_str_mv 3cc4b7c0dcf59d3ff31f9f13b0e5a831_***_Christopher Barnett
160965ff7131686ab9263d39886c8c1a_***_Vitaly Moroz
2ce7e1dd9006164425415a35fa452494_***_Richard Cobley
author Christopher Barnett
Vitaly Moroz
Richard Cobley
author2 Mona M. Alyobi
Christopher Barnett
Cyrill B. Muratov
Vitaly Moroz
Richard Cobley
format Journal article
container_title Carbon
container_volume 163
container_start_page 379
publishDate 2020
institution Swansea University
issn 0008-6223
doi_str_mv 10.1016/j.carbon.2020.03.046
publisher Elsevier BV
college_str Faculty of Science and Engineering
hierarchytype
hierarchy_top_id facultyofscienceandengineering
hierarchy_top_title Faculty of Science and Engineering
hierarchy_parent_id facultyofscienceandengineering
hierarchy_parent_title Faculty of Science and Engineering
department_str School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering{{{_:::_}}}Faculty of Science and Engineering{{{_:::_}}}School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering
document_store_str 1
active_str 0
description Strain and deformation alter the electronic properties of graphene, offering the possibility to control its transport behavior. The tip of a scanning tunneling microscope is an ideal tool to mechanically perturb the system locally while simultaneously measuring the electronic response. Here we stretch few- and multi-layer graphene membranes supported on SiO2 substrates and suspended over voids. An automated approach-retraction method stably traces the graphene deflection hysteresis curve hundreds of times across four samples, measuring the voltage-dependent stretching, from which we extract the hysteresis width. Using a force-balance model, we are able to reproduce the voltage-dependent hysteretic graphene extension behavior. We directly observe a voltage-dependent interplay where electrostatic forces dominate at high voltage and van der Waals forces at low voltage. The relative contribution of each force is dependent on the graphene and tunneling resistance, giving rise to different observed voltage-dependent behavior between samples. Understanding the voltage dependence of these forces impacts scanning probe measurement of 2D materials and informs oscillating graphene device design where similar forces act from the side walls of cavities, leading towards strain engineering of layered 2D systems.
published_date 2020-08-15T04:07:02Z
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score 11.035634

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