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Thin CdTe Layers Deposited by a Chamberless Inline Process using MOCVD, Simulation and Experiment

Shafiul Monir, Giray Kartopu, Vincent Barrioz, Dan Lamb Orcid Logo, Stuart Irvine Orcid Logo, Xiaogang Yang, Yuriy Vagapov

Applied Sciences, Volume: 10, Issue: 5, Start page: 1734

Swansea University Authors: Giray Kartopu , Dan Lamb Orcid Logo, Stuart Irvine Orcid Logo

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DOI (Published version): 10.3390/app10051734

Abstract

The deposition of thin Cadmium Telluride (CdTe) layers was performed by a chamberless metalorganic chemical vapour deposition process, and trends in growth rates were compared with computational fluid dynamics numerical modelling. Dimethylcadmium and diisopropyltelluride were used as the reactants,...

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Published in: Applied Sciences
ISSN: 2076-3417
Published: MDPI AG 2020
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URI: https://cronfa.swan.ac.uk/Record/cronfa53874
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spelling 2020-10-23T10:32:33.9458949 v2 53874 2020-03-27 Thin CdTe Layers Deposited by a Chamberless Inline Process using MOCVD, Simulation and Experiment 5c4917e0a29801844ec31737672f930c Giray Kartopu Giray Kartopu true false decd92a653848a357f0c6f8e38e0aea0 0000-0002-4762-4641 Dan Lamb Dan Lamb true false 1ddb966eccef99aa96e87f1ea4917f1f 0000-0002-1652-4496 Stuart Irvine Stuart Irvine true false 2020-03-27 MTLS The deposition of thin Cadmium Telluride (CdTe) layers was performed by a chamberless metalorganic chemical vapour deposition process, and trends in growth rates were compared with computational fluid dynamics numerical modelling. Dimethylcadmium and diisopropyltelluride were used as the reactants, released from a recently developed coating head orientated above the glass substrate (of area 15 × 15 cm2). Depositions were performed in static mode and dynamic mode (i.e., over a moving substrate). The deposited CdTe film weights were compared against the calculated theoretical value of the molar supply of the precursors, in order to estimate material utilisation. The numerical simulation gave insight into the effect that the exhaust’s restricted flow orifice configuration had on the deposition uniformity observed in the static experiments. It was shown that > 59% of material utilisation could be achieved under favourable deposition conditions. The activation energy determined from the Arrhenius plot of growth rate was ~ 60 kJ/mol and was in good agreement with previously reported CdTe growth using metalorganic chemical vapour deposition (MOCVD). Process requirements for using a chamberless environment for the inline deposition of compound semiconductor layers were presented. Journal Article Applied Sciences 10 5 1734 MDPI AG 2076-3417 CFD modelling; chamberless inline process (CIP); MOCVD; cadmium telluride 3 3 2020 2020-03-03 10.3390/app10051734 COLLEGE NANME Materials Science and Engineering COLLEGE CODE MTLS Swansea University 2020-10-23T10:32:33.9458949 2020-03-27T09:53:32.7557051 College of Engineering Engineering Shafiul Monir 1 Giray Kartopu 2 Vincent Barrioz 3 Dan Lamb 0000-0002-4762-4641 4 Stuart Irvine 0000-0002-1652-4496 5 Xiaogang Yang 6 Yuriy Vagapov 7 53874__16944__53a7beb0aa854cc982599c661d19db3b.pdf 53874.pdf 2020-03-27T09:55:02.7424128 Output 4113697 application/pdf Version of Record true Released under the terms of a Creative Commons Attribution License (CC-BY). true eng https://creativecommons.org/licenses/by/4.0/
title Thin CdTe Layers Deposited by a Chamberless Inline Process using MOCVD, Simulation and Experiment
spellingShingle Thin CdTe Layers Deposited by a Chamberless Inline Process using MOCVD, Simulation and Experiment
Giray, Kartopu
Dan, Lamb
Stuart, Irvine
title_short Thin CdTe Layers Deposited by a Chamberless Inline Process using MOCVD, Simulation and Experiment
title_full Thin CdTe Layers Deposited by a Chamberless Inline Process using MOCVD, Simulation and Experiment
title_fullStr Thin CdTe Layers Deposited by a Chamberless Inline Process using MOCVD, Simulation and Experiment
title_full_unstemmed Thin CdTe Layers Deposited by a Chamberless Inline Process using MOCVD, Simulation and Experiment
title_sort Thin CdTe Layers Deposited by a Chamberless Inline Process using MOCVD, Simulation and Experiment
author_id_str_mv 5c4917e0a29801844ec31737672f930c
decd92a653848a357f0c6f8e38e0aea0
1ddb966eccef99aa96e87f1ea4917f1f
author_id_fullname_str_mv 5c4917e0a29801844ec31737672f930c_***_Giray, Kartopu_***_
decd92a653848a357f0c6f8e38e0aea0_***_Dan, Lamb_***_0000-0002-4762-4641
1ddb966eccef99aa96e87f1ea4917f1f_***_Stuart, Irvine_***_0000-0002-1652-4496
author Giray, Kartopu
Dan, Lamb
Stuart, Irvine
author2 Shafiul Monir
Giray Kartopu
Vincent Barrioz
Dan Lamb
Stuart Irvine
Xiaogang Yang
Yuriy Vagapov
format Journal article
container_title Applied Sciences
container_volume 10
container_issue 5
container_start_page 1734
publishDate 2020
institution Swansea University
issn 2076-3417
doi_str_mv 10.3390/app10051734
publisher MDPI AG
college_str College of Engineering
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hierarchy_top_title College of Engineering
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hierarchy_parent_title College of Engineering
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description The deposition of thin Cadmium Telluride (CdTe) layers was performed by a chamberless metalorganic chemical vapour deposition process, and trends in growth rates were compared with computational fluid dynamics numerical modelling. Dimethylcadmium and diisopropyltelluride were used as the reactants, released from a recently developed coating head orientated above the glass substrate (of area 15 × 15 cm2). Depositions were performed in static mode and dynamic mode (i.e., over a moving substrate). The deposited CdTe film weights were compared against the calculated theoretical value of the molar supply of the precursors, in order to estimate material utilisation. The numerical simulation gave insight into the effect that the exhaust’s restricted flow orifice configuration had on the deposition uniformity observed in the static experiments. It was shown that > 59% of material utilisation could be achieved under favourable deposition conditions. The activation energy determined from the Arrhenius plot of growth rate was ~ 60 kJ/mol and was in good agreement with previously reported CdTe growth using metalorganic chemical vapour deposition (MOCVD). Process requirements for using a chamberless environment for the inline deposition of compound semiconductor layers were presented.
published_date 2020-03-03T04:18:49Z
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