Absence of non-local manipulation of oxygen atoms inserted below the Si(111)-7x7 surface

Cobley, Richard; Kaya, Dogan; Palmer, Richard

doi:10.1021/acs.langmuir.0c00058

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Absence of non-local manipulation of oxygen atoms inserted below the Si(111)-7x7 surface

Richard Cobley

, Dogan Kaya, Richard Palmer

Langmuir, Volume: 36, Issue: 27, Pages: 8027 - 8031

Swansea University Authors: Richard Cobley , Richard Palmer

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DOI (Published version): 10.1021/acs.langmuir.0c00058

Abstract

The injection of electrons from the scanning tunneling microscope tip can be used to perform nanoscale chemistry and study hot electron transport through surfaces. While nonlocal manipulation has been demonstrated primarily for aromatic adsorbates, here we confirm that oxygen atoms bonded to the Si(...

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Published in:	Langmuir
ISSN:	0743-7463 1520-5827
Published:	American Chemical Society (ACS) 2020
Online Access:	Check full text
URI:	https://cronfa.swan.ac.uk/Record/cronfa54557
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first_indexed	2020-06-27T10:53:31Z
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spelling	2020-10-25T14:35:19.0544083 v2 54557 2020-06-27 Absence of non-local manipulation of oxygen atoms inserted below the Si(111)-7x7 surface 2ce7e1dd9006164425415a35fa452494 0000-0003-4833-8492 Richard Cobley Richard Cobley true false 6ae369618efc7424d9774377536ea519 0000-0001-8728-8083 Richard Palmer Richard Palmer true false 2020-06-27 EEEG The injection of electrons from the scanning tunneling microscope tip can be used to perform nanoscale chemistry and study hot electron transport through surfaces. While nonlocal manipulation has been demonstrated primarily for aromatic adsorbates, here we confirm that oxygen atoms bonded to the Si(111) surface can also be nonlocally manipulated, and we fit the measured manipulation data to a single channel decay model. Unlike aromatic adsorption systems, oxygen atoms also insert below the surface of silicon. Although the inserted oxygen can be manipulated when the tip is directly over the relevant silicon adatom, it is not possible to induce nonlocal manipulation of inserted oxygen atoms at the same bias. We attribute this to the electrons injected at +4 eV initially relaxing to couple to the highest available surface state at +3.4 eV before laterally transporting through the surface. With a manipulation threshold of 3.8 eV for oxygen inserted into silicon, once carriers have undergone lateral transport, they do not possess enough energy to manipulate and remove oxygen atoms inserted beneath the surface of silicon. This result confirms that nonlocal nanoscale chemistry using the scanning tunneling microscope tip is dependent not only on the energy required for atomic manipulation, but also on the energy of the available surface states to carry the electrons to the manipulation site. Journal Article Langmuir 36 27 8027 8031 American Chemical Society (ACS) 0743-7463 1520-5827 14 7 2020 2020-07-14 10.1021/acs.langmuir.0c00058 COLLEGE NANME Electronic and Electrical Engineering COLLEGE CODE EEEG Swansea University UKRI, EP/K006061/2 2020-10-25T14:35:19.0544083 2020-06-27T11:51:27.5286250 Professional Services ISS - Uncategorised Richard Cobley 0000-0003-4833-8492 1 Dogan Kaya 2 Richard Palmer 0000-0001-8728-8083 3 54557__17851__001966a9c32c43bebbe283d3d8f3ec80.pdf 54557.pdf 2020-08-04T16:26:15.3096762 Output 1549017 application/pdf Version of Record true This is an open access article published under a Creative Commons Attribution License (CC-BY). true eng https://pubs.acs.org/page/policy/authorchoice_ccby_termsofuse.html
title	Absence of non-local manipulation of oxygen atoms inserted below the Si(111)-7x7 surface
spellingShingle	Absence of non-local manipulation of oxygen atoms inserted below the Si(111)-7x7 surface Richard Cobley Richard Palmer
title_short	Absence of non-local manipulation of oxygen atoms inserted below the Si(111)-7x7 surface
title_full	Absence of non-local manipulation of oxygen atoms inserted below the Si(111)-7x7 surface
title_fullStr	Absence of non-local manipulation of oxygen atoms inserted below the Si(111)-7x7 surface
title_full_unstemmed	Absence of non-local manipulation of oxygen atoms inserted below the Si(111)-7x7 surface
title_sort	Absence of non-local manipulation of oxygen atoms inserted below the Si(111)-7x7 surface
author_id_str_mv	2ce7e1dd9006164425415a35fa452494 6ae369618efc7424d9774377536ea519
author_id_fullname_str_mv	2ce7e1dd9006164425415a35fa452494_*_Richard Cobley 6ae369618efc7424d9774377536ea519_*_Richard Palmer
author	Richard Cobley Richard Palmer
author2	Richard Cobley Dogan Kaya Richard Palmer
format	Journal article
container_title	Langmuir
container_volume	36
container_issue	27
container_start_page	8027
publishDate	2020
institution	Swansea University
issn	0743-7463 1520-5827
doi_str_mv	10.1021/acs.langmuir.0c00058
publisher	American Chemical Society (ACS)
college_str	Professional Services
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description	The injection of electrons from the scanning tunneling microscope tip can be used to perform nanoscale chemistry and study hot electron transport through surfaces. While nonlocal manipulation has been demonstrated primarily for aromatic adsorbates, here we confirm that oxygen atoms bonded to the Si(111) surface can also be nonlocally manipulated, and we fit the measured manipulation data to a single channel decay model. Unlike aromatic adsorption systems, oxygen atoms also insert below the surface of silicon. Although the inserted oxygen can be manipulated when the tip is directly over the relevant silicon adatom, it is not possible to induce nonlocal manipulation of inserted oxygen atoms at the same bias. We attribute this to the electrons injected at +4 eV initially relaxing to couple to the highest available surface state at +3.4 eV before laterally transporting through the surface. With a manipulation threshold of 3.8 eV for oxygen inserted into silicon, once carriers have undergone lateral transport, they do not possess enough energy to manipulate and remove oxygen atoms inserted beneath the surface of silicon. This result confirms that nonlocal nanoscale chemistry using the scanning tunneling microscope tip is dependent not only on the energy required for atomic manipulation, but also on the energy of the available surface states to carry the electrons to the manipulation site.
published_date	2020-07-14T04:08:10Z
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score	11.017797

Absence of non-local manipulation of oxygen atoms inserted below the Si(111)-7x7 surface

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