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Preparation of Si quantum dots by phase transition with controlled annealing

Liyuan Fang, Libin Tang, Vincent Teng Orcid Logo, Jinzhong Xiang

Nanotechnology, Volume: 32, Issue: 41, Start page: 415205

Swansea University Author: Vincent Teng Orcid Logo

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DOI (Published version): 10.1088/1361-6528/ac1196

Abstract

Silicon quantum dots (Si-QDs) are excellent luminescent material due to its unique optoelectronic properties and have huge application potential in the field of photodetection. Recently, there has been much research interests in developing low-cost, facile and environmentally friendly methods to pre...

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Published in: Nanotechnology
ISSN: 0957-4484 1361-6528
Published: IOP Publishing 2021
Online Access: Check full text

URI: https://cronfa.swan.ac.uk/Record/cronfa57285
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Abstract: Silicon quantum dots (Si-QDs) are excellent luminescent material due to its unique optoelectronic properties and have huge application potential in the field of photodetection. Recently, there has been much research interests in developing low-cost, facile and environmentally friendly methods to prepare the nanomaterials in addition to yielding excellent performances. In this article, we developed a novel preparation method of producing Si-QDs film based on carbon-silicon composite. The film was synthesized by co-sputtering using magnetron sputtering technique and studied at different annealing temperatures. Upon annealing, the film was transformed from an amorphous state to a crystalline state leading to Si-QDs precipitation, which can be observed at a low temperature of 600 °C. A Si-QDs thin film/n-Si photodetector was then prepared and characterized. The device exhibited a high specific detection rate (D*) of 1.246×1012 cmHz1/2W-1 under 940 nm (1.1 mWcm-2) infrared radiation at 5 V bias. It also demonstrated good responsiveness and stability.
College: Faculty of Science and Engineering
Funders: This work was supported by National Natural Science Foundation of China (Grant Nos. 61106098 and 51462037) and Yunnan Key Laboratory of Advanced Photoelectric Materials & Devices, China.
Issue: 41
Start Page: 415205

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