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Near‐Infrared Light‐Emitting Diodes from Organic Radicals with Charge Control

Hwan‐Hee Cho, Shun Kimura, Neil C. Greenham, Yuki Tani, Ryota Matsuoka, Hiroshi Nishihara, Richard H. Friend, Tetsuro Kusamoto Orcid Logo, Emrys Evans Orcid Logo

Advanced Optical Materials, Volume: 10, Issue: 21, Start page: 2200628

Swansea University Author: Emrys Evans Orcid Logo

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DOI (Published version): 10.1002/adom.202200628

Abstract

Organic radicals with fluorescence from doublet-spin energy manifolds circumvent efficiency limits from singlet–triplet photophysics in organic light-emitting diodes (OLEDs). The singly occupied molecular orbital (SOMO) in radicals enables the higher potential performance. The SOMO also presents sub...

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Published in: Advanced Optical Materials
ISSN: 2195-1071 2195-1071
Published: Wiley 2022
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URI: https://cronfa.swan.ac.uk/Record/cronfa60644
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spelling 2022-11-17T13:08:51.1813556 v2 60644 2022-07-27 Near‐Infrared Light‐Emitting Diodes from Organic Radicals with Charge Control 538e217307dac24c9642ef1b03b41485 0000-0002-9092-3938 Emrys Evans Emrys Evans true false 2022-07-27 CHEM Organic radicals with fluorescence from doublet-spin energy manifolds circumvent efficiency limits from singlet–triplet photophysics in organic light-emitting diodes (OLEDs). The singly occupied molecular orbital (SOMO) in radicals enables the higher potential performance. The SOMO also presents substantially lower energy frontier orbitals compared to conventional fluorescent emitters for device operation, which can cause severe electron trapping that limits the performance of radical OLEDs. To improve optoelectronic performance, electron donor–acceptor-mixed hosts are used to control charge transport for enhanced radical electroluminescence by charge recombination on SOMO and frontier orbitals. The (2-chloro-3-pyridyl)bis(2,4,6-trichlorophenyl)methyl-based radical is designed to test the charge-controlled device architectures in OLEDs by transient analysis and device characterization studies. Efficient radical OLEDs with 4.7% maximum external quantum efficiency are reported—showing substantial advances in performance for OLEDs with peak emission beyond 800 nm. In addition, substantially improved performance at higher current density operation and more than two orders of higher lifetime stability are achieved with mixed hosts. These results enable pathways to infrared-emitting devices with applications ranging from communications to bioimaging. Journal Article Advanced Optical Materials 10 21 2200628 Wiley 2195-1071 2195-1071 Energy transfer, mixed hosts, near-infrared organic light-emitting diodes, organic radicals 4 11 2022 2022-11-04 10.1002/adom.202200628 COLLEGE NANME Chemistry COLLEGE CODE CHEM Swansea University SU Library paid the OA fee (TA Institutional Deal) EPSRC (EP/M005143/1); URF/R1/201300; European Union (101020167) 2022-11-17T13:08:51.1813556 2022-07-27T11:32:56.7296292 Faculty of Science and Engineering School of Engineering and Applied Sciences - Chemistry Hwan‐Hee Cho 1 Shun Kimura 2 Neil C. Greenham 3 Yuki Tani 4 Ryota Matsuoka 5 Hiroshi Nishihara 6 Richard H. Friend 7 Tetsuro Kusamoto 0000-0001-8391-4526 8 Emrys Evans 0000-0002-9092-3938 9 60644__25807__03cf770c35524e0c8369b654863dd91f.pdf 60644.pdf 2022-11-16T14:35:47.0075573 Output 3735409 application/pdf Version of Record true © 2022 The Authors. This is an open access article under the terms of the Creative Commons Attribution License true eng http://creativecommons.org/licenses/by/4.0/
title Near‐Infrared Light‐Emitting Diodes from Organic Radicals with Charge Control
spellingShingle Near‐Infrared Light‐Emitting Diodes from Organic Radicals with Charge Control
Emrys Evans
title_short Near‐Infrared Light‐Emitting Diodes from Organic Radicals with Charge Control
title_full Near‐Infrared Light‐Emitting Diodes from Organic Radicals with Charge Control
title_fullStr Near‐Infrared Light‐Emitting Diodes from Organic Radicals with Charge Control
title_full_unstemmed Near‐Infrared Light‐Emitting Diodes from Organic Radicals with Charge Control
title_sort Near‐Infrared Light‐Emitting Diodes from Organic Radicals with Charge Control
author_id_str_mv 538e217307dac24c9642ef1b03b41485
author_id_fullname_str_mv 538e217307dac24c9642ef1b03b41485_***_Emrys Evans
author Emrys Evans
author2 Hwan‐Hee Cho
Shun Kimura
Neil C. Greenham
Yuki Tani
Ryota Matsuoka
Hiroshi Nishihara
Richard H. Friend
Tetsuro Kusamoto
Emrys Evans
format Journal article
container_title Advanced Optical Materials
container_volume 10
container_issue 21
container_start_page 2200628
publishDate 2022
institution Swansea University
issn 2195-1071
2195-1071
doi_str_mv 10.1002/adom.202200628
publisher Wiley
college_str Faculty of Science and Engineering
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hierarchy_top_id facultyofscienceandengineering
hierarchy_top_title Faculty of Science and Engineering
hierarchy_parent_id facultyofscienceandengineering
hierarchy_parent_title Faculty of Science and Engineering
department_str School of Engineering and Applied Sciences - Chemistry{{{_:::_}}}Faculty of Science and Engineering{{{_:::_}}}School of Engineering and Applied Sciences - Chemistry
document_store_str 1
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description Organic radicals with fluorescence from doublet-spin energy manifolds circumvent efficiency limits from singlet–triplet photophysics in organic light-emitting diodes (OLEDs). The singly occupied molecular orbital (SOMO) in radicals enables the higher potential performance. The SOMO also presents substantially lower energy frontier orbitals compared to conventional fluorescent emitters for device operation, which can cause severe electron trapping that limits the performance of radical OLEDs. To improve optoelectronic performance, electron donor–acceptor-mixed hosts are used to control charge transport for enhanced radical electroluminescence by charge recombination on SOMO and frontier orbitals. The (2-chloro-3-pyridyl)bis(2,4,6-trichlorophenyl)methyl-based radical is designed to test the charge-controlled device architectures in OLEDs by transient analysis and device characterization studies. Efficient radical OLEDs with 4.7% maximum external quantum efficiency are reported—showing substantial advances in performance for OLEDs with peak emission beyond 800 nm. In addition, substantially improved performance at higher current density operation and more than two orders of higher lifetime stability are achieved with mixed hosts. These results enable pathways to infrared-emitting devices with applications ranging from communications to bioimaging.
published_date 2022-11-04T04:18:55Z
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