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High performance quantum piezotronic tunneling transistor based on edge states of MoS2 nanoribbon

Minjiang Dan, Gongwei Hu, Lijie Li Orcid Logo, Yan Zhang

Nano Energy, Volume: 98, Start page: 107275

Swansea University Author: Lijie Li Orcid Logo

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DOI (Published version): 10.1016/j.nanoen.2022.107275

Published in: Nano Energy
ISSN: 2211-2855
Published: Elsevier BV 2022
Online Access: Check full text

URI: https://cronfa.swan.ac.uk/Record/cronfa61662
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first_indexed 2022-10-25T17:13:17Z
last_indexed 2023-01-13T19:22:33Z
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spelling 2022-11-11T14:40:06.6033873 v2 61662 2022-10-25 High performance quantum piezotronic tunneling transistor based on edge states of MoS2 nanoribbon ed2c658b77679a28e4c1dcf95af06bd6 0000-0003-4630-7692 Lijie Li Lijie Li true false 2022-10-25 EEEG Journal Article Nano Energy 98 107275 Elsevier BV 2211-2855 Edge states; MoS2 nanoribbon; Piezotronic effect; Quantum tunneling transistor 1 7 2022 2022-07-01 10.1016/j.nanoen.2022.107275 COLLEGE NANME Electronic and Electrical Engineering COLLEGE CODE EEEG Swansea University The authors are thankful for the support from Major Project of National Natural Science Foundation of China (Grant No. 52192612, 52192610). The authors are thankful for the support from University of Electronic Science and Technology of China (grant no. ZYGX2021YGCX001). 2022-11-11T14:40:06.6033873 2022-10-25T18:09:17.1172801 Faculty of Science and Engineering School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering Minjiang Dan 1 Gongwei Hu 2 Lijie Li 0000-0003-4630-7692 3 Yan Zhang 4 61662__25586__e3fdc97a6a80417abd30f1128eb321f8.pdf NE_2022_accepted.pdf 2022-10-25T18:16:28.5888273 Output 2212099 application/pdf Accepted Manuscript true 2023-04-14T00:00:00.0000000 ©2022 All rights reserved. All article content, except where otherwise noted, is licensed under a Creative Commons Attribution Non-Commercial No Derivatives License (CC-BY-NC-ND) true eng https://creativecommons.org/licenses/by-nc-nd/4.0/
title High performance quantum piezotronic tunneling transistor based on edge states of MoS2 nanoribbon
spellingShingle High performance quantum piezotronic tunneling transistor based on edge states of MoS2 nanoribbon
Lijie Li
title_short High performance quantum piezotronic tunneling transistor based on edge states of MoS2 nanoribbon
title_full High performance quantum piezotronic tunneling transistor based on edge states of MoS2 nanoribbon
title_fullStr High performance quantum piezotronic tunneling transistor based on edge states of MoS2 nanoribbon
title_full_unstemmed High performance quantum piezotronic tunneling transistor based on edge states of MoS2 nanoribbon
title_sort High performance quantum piezotronic tunneling transistor based on edge states of MoS2 nanoribbon
author_id_str_mv ed2c658b77679a28e4c1dcf95af06bd6
author_id_fullname_str_mv ed2c658b77679a28e4c1dcf95af06bd6_***_Lijie Li
author Lijie Li
author2 Minjiang Dan
Gongwei Hu
Lijie Li
Yan Zhang
format Journal article
container_title Nano Energy
container_volume 98
container_start_page 107275
publishDate 2022
institution Swansea University
issn 2211-2855
doi_str_mv 10.1016/j.nanoen.2022.107275
publisher Elsevier BV
college_str Faculty of Science and Engineering
hierarchytype
hierarchy_top_id facultyofscienceandengineering
hierarchy_top_title Faculty of Science and Engineering
hierarchy_parent_id facultyofscienceandengineering
hierarchy_parent_title Faculty of Science and Engineering
department_str School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering{{{_:::_}}}Faculty of Science and Engineering{{{_:::_}}}School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering
document_store_str 1
active_str 0
published_date 2022-07-01T04:20:39Z
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score 11.016235

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