Journal article 361 views
AlN/diamond interface nanoengineering for reducing thermal boundary resistance by molecular dynamics simulations
Applied Surface Science, Volume: 615, Start page: 156419
Swansea University Author: Lijie Li
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DOI (Published version): 10.1016/j.apsusc.2023.156419
Abstract
Interfacial thermal transport has become a significant bottleneck in thermal management, particularly for the electronic high-power devices represented by III-V semiconductor devices. Diamond has great potential to be integrated with devices to dissipate heat efficiently due to its ultra-high therma...
Published in: | Applied Surface Science |
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ISSN: | 0169-4332 |
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Elsevier BV
2023
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URI: | https://cronfa.swan.ac.uk/Record/cronfa62330 |
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2023-01-24T10:58:04.6465452 v2 62330 2023-01-16 AlN/diamond interface nanoengineering for reducing thermal boundary resistance by molecular dynamics simulations ed2c658b77679a28e4c1dcf95af06bd6 0000-0003-4630-7692 Lijie Li Lijie Li true false 2023-01-16 EEEG Interfacial thermal transport has become a significant bottleneck in thermal management, particularly for the electronic high-power devices represented by III-V semiconductor devices. Diamond has great potential to be integrated with devices to dissipate heat efficiently due to its ultra-high thermal conductivity. In this paper, the Non-equilibrium Molecular Dynamics method, taking into consideration of the parameters such as the type of the interleaved nanopillars, the size and the height of the nanopillars, was used to study the influence of nanopillars on the thermal boundary resistance (TBR) at AlN/diamond interfaces. The TBR of the optimal AlN/diamond interface of nanopillar structures could be reduced by 28% compared to the planar interface. The vibrational density of states (VDOS) analysis of both AlN and diamond on each side of the interface can reveal that the enhancement of AlN intermediate frequency phonons and the shift of diamond VDOS towards the lower frequency can contribute to the optimization of the interfacial thermal transport. Hence, this work can provide a deeper understanding of the impact of nanostructures on the interfacial thermal transport and can also be a guideline for efficient thermal management through the introduction of nanostructures at the heterogeneous interfaces. Journal Article Applied Surface Science 615 156419 Elsevier BV 0169-4332 Thermal boundary resistance; AlN/diamond interface; Nanostructure; Molecular dynamics 1 4 2023 2023-04-01 10.1016/j.apsusc.2023.156419 COLLEGE NANME Electronic and Electrical Engineering COLLEGE CODE EEEG Swansea University 2023-01-24T10:58:04.6465452 2023-01-16T09:12:24.0391620 Faculty of Science and Engineering School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering Zijun Qi 0000-0002-4440-5734 1 Wei Shen 2 Rui Li 3 Xiang Sun 4 Lijie Li 0000-0003-4630-7692 5 Qijun Wang 6 Gai Wu 0000-0002-9726-6328 7 Kang Liang 8 Under embargo Under embargo 2023-01-16T10:17:10.8351361 Output 3971527 application/pdf Accepted Manuscript true 2024-01-12T00:00:00.0000000 ©2023 All rights reserved. All article content, except where otherwise noted, is licensed under a Creative Commons Attribution Non-Commercial No Derivatives License (CC-BY-NC-ND) true eng https://creativecommons.org/licenses/by-nc-nd/4.0/ |
title |
AlN/diamond interface nanoengineering for reducing thermal boundary resistance by molecular dynamics simulations |
spellingShingle |
AlN/diamond interface nanoengineering for reducing thermal boundary resistance by molecular dynamics simulations Lijie Li |
title_short |
AlN/diamond interface nanoengineering for reducing thermal boundary resistance by molecular dynamics simulations |
title_full |
AlN/diamond interface nanoengineering for reducing thermal boundary resistance by molecular dynamics simulations |
title_fullStr |
AlN/diamond interface nanoengineering for reducing thermal boundary resistance by molecular dynamics simulations |
title_full_unstemmed |
AlN/diamond interface nanoengineering for reducing thermal boundary resistance by molecular dynamics simulations |
title_sort |
AlN/diamond interface nanoengineering for reducing thermal boundary resistance by molecular dynamics simulations |
author_id_str_mv |
ed2c658b77679a28e4c1dcf95af06bd6 |
author_id_fullname_str_mv |
ed2c658b77679a28e4c1dcf95af06bd6_***_Lijie Li |
author |
Lijie Li |
author2 |
Zijun Qi Wei Shen Rui Li Xiang Sun Lijie Li Qijun Wang Gai Wu Kang Liang |
format |
Journal article |
container_title |
Applied Surface Science |
container_volume |
615 |
container_start_page |
156419 |
publishDate |
2023 |
institution |
Swansea University |
issn |
0169-4332 |
doi_str_mv |
10.1016/j.apsusc.2023.156419 |
publisher |
Elsevier BV |
college_str |
Faculty of Science and Engineering |
hierarchytype |
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facultyofscienceandengineering |
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Faculty of Science and Engineering |
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facultyofscienceandengineering |
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Faculty of Science and Engineering |
department_str |
School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering{{{_:::_}}}Faculty of Science and Engineering{{{_:::_}}}School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering |
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description |
Interfacial thermal transport has become a significant bottleneck in thermal management, particularly for the electronic high-power devices represented by III-V semiconductor devices. Diamond has great potential to be integrated with devices to dissipate heat efficiently due to its ultra-high thermal conductivity. In this paper, the Non-equilibrium Molecular Dynamics method, taking into consideration of the parameters such as the type of the interleaved nanopillars, the size and the height of the nanopillars, was used to study the influence of nanopillars on the thermal boundary resistance (TBR) at AlN/diamond interfaces. The TBR of the optimal AlN/diamond interface of nanopillar structures could be reduced by 28% compared to the planar interface. The vibrational density of states (VDOS) analysis of both AlN and diamond on each side of the interface can reveal that the enhancement of AlN intermediate frequency phonons and the shift of diamond VDOS towards the lower frequency can contribute to the optimization of the interfacial thermal transport. Hence, this work can provide a deeper understanding of the impact of nanostructures on the interfacial thermal transport and can also be a guideline for efficient thermal management through the introduction of nanostructures at the heterogeneous interfaces. |
published_date |
2023-04-01T04:21:51Z |
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1763754441922576384 |
score |
11.01628 |