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Mid-gap trap state-mediated dark current in organic photodiodes

Oskar Sandberg Orcid Logo, CHRISTINA KAISER, Stefan Zeiske, Nasim Zarrabi, Sam Gielen, Wouter Maes Orcid Logo, Koen Vandewal Orcid Logo, Paul Meredith Orcid Logo, Ardalan Armin Orcid Logo

Nature Photonics, Volume: 17, Issue: 4, Pages: 368 - 374

Swansea University Authors: Oskar Sandberg Orcid Logo, CHRISTINA KAISER, Stefan Zeiske, Paul Meredith Orcid Logo, Ardalan Armin Orcid Logo

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DOI (Published version): 10.1038/s41566-023-01173-5

Abstract

Photodiodes are ubiquitous in industry and consumer electronics. New applications for photodiodes are constantly emerging, such as the internet of things and wearable electronics that demand different mechanical and optoelectronic properties from those provided by conventional inorganic devices. Thi...

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Published in: Nature Photonics
ISSN: 1749-4885 1749-4893
Published: Springer Science and Business Media LLC 2023
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New applications for photodiodes are constantly emerging, such as the internet of things and wearable electronics that demand different mechanical and optoelectronic properties from those provided by conventional inorganic devices. This has stimulated considerable interest in the use of next generation semiconductors, particularly the organics, which provide a vast palette of available optoelectronic properties, can be incorporated into flexible form factor geometries, and promise extremely low cost, low embodied energy manufacturing from earth abundant materials. The sensitivity of a photodiode to low light intensities (typically important in these new applications) depends critically on the dark current. Organic photodiodes, however, are characterized by a much higher dark current than expected for thermally excited band-toband transitions. Here, we show that the lower limit of the dark current is given by recombination via mid-gap trap states. This new insight is generated from temperature dependent dark current measurements of narrow-gap photodiodes for the near-infrared. Based on Shockley-Read-Hall statistics, a diode equation is derived which can be used to determine an upper limit for the specific detectivity and to explain the general trend observed for the light to dark current ratio as a function of the experimental open-circuit voltage for a series of organic photodiodes. A detailed understanding of the origins of noise in any detector is fundamental to defining performance limitations and thus is critical to materials and device selection, design and optimisation for all applications. 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spelling v2 62816 2023-03-07 Mid-gap trap state-mediated dark current in organic photodiodes 9e91512a54d5aee66cd77851a96ba747 0000-0003-3778-8746 Oskar Sandberg Oskar Sandberg true false dd1e83902e695cade3f07fbb6180c7f8 CHRISTINA KAISER CHRISTINA KAISER true false 0c9c5b89df9ac882c3e09dd1a9f28fc5 Stefan Zeiske Stefan Zeiske true false 31e8fe57fa180d418afd48c3af280c2e 0000-0002-9049-7414 Paul Meredith Paul Meredith true false 22b270622d739d81e131bec7a819e2fd 0000-0002-6129-5354 Ardalan Armin Ardalan Armin true false 2023-03-07 SPH Photodiodes are ubiquitous in industry and consumer electronics. New applications for photodiodes are constantly emerging, such as the internet of things and wearable electronics that demand different mechanical and optoelectronic properties from those provided by conventional inorganic devices. This has stimulated considerable interest in the use of next generation semiconductors, particularly the organics, which provide a vast palette of available optoelectronic properties, can be incorporated into flexible form factor geometries, and promise extremely low cost, low embodied energy manufacturing from earth abundant materials. The sensitivity of a photodiode to low light intensities (typically important in these new applications) depends critically on the dark current. Organic photodiodes, however, are characterized by a much higher dark current than expected for thermally excited band-toband transitions. Here, we show that the lower limit of the dark current is given by recombination via mid-gap trap states. This new insight is generated from temperature dependent dark current measurements of narrow-gap photodiodes for the near-infrared. Based on Shockley-Read-Hall statistics, a diode equation is derived which can be used to determine an upper limit for the specific detectivity and to explain the general trend observed for the light to dark current ratio as a function of the experimental open-circuit voltage for a series of organic photodiodes. A detailed understanding of the origins of noise in any detector is fundamental to defining performance limitations and thus is critical to materials and device selection, design and optimisation for all applications. Our work establishes these important principles for organic semiconductor photodiodes for the near-infrared. Journal Article Nature Photonics 17 4 368 374 Springer Science and Business Media LLC 1749-4885 1749-4893 Electronic Materials and Devices, Nanoscience, organic photodiodes, electronics, nanoscience 1 4 2023 2023-04-01 10.1038/s41566-023-01173-5 http://dx.doi.org/10.1038/s41566-023-01173-5 COLLEGE NANME Physics COLLEGE CODE SPH Swansea University External research funder(s) paid the OA fee (includes OA grants disbursed by the Library) This work was funded through the Welsh Government’s Sêr Cymru II Program ‘Sustainable Advanced Materials’ (Welsh European Funding Office—European Regional Development Fund). C.K. is recipient of a UKRI EPSRC Doctoral Training Program studentship. P.M. is a Sêr Cymru II Research Chair and A.A. is a Rising Star Fellow also funded through the Welsh Government’s Sêr Cymru II ‘Sustainable Advanced Materials’ Program (European Regional Development Fund, Welsh European Funding Office and Swansea University Strategic Initiative). This work was also funded by UKRI through the EPSRC Programme grant EP/T028513/1 Application Targeted Integrated Photovoltaics. S.G. acknowledges the Research Foundation–Flanders (FWO Vlaanderen) for granting him a PhD fellowship. K.V. and W.M. are grateful for project funding by the FWO (G0D0118N, G0B2718N and GOH3816NAUHL). 2023-07-24T17:07:09.9667312 2023-03-07T11:22:17.4510271 Faculty of Science and Engineering School of Biosciences, Geography and Physics - Physics Oskar Sandberg 0000-0003-3778-8746 1 CHRISTINA KAISER 2 Stefan Zeiske 3 Nasim Zarrabi 4 Sam Gielen 5 Wouter Maes 0000-0001-7883-3393 6 Koen Vandewal 0000-0001-5471-383x 7 Paul Meredith 0000-0002-9049-7414 8 Ardalan Armin 0000-0002-6129-5354 9 62816__28164__58587919369147fe97657f324f898658.pdf 62816.VOR.pdf 2023-07-24T16:56:47.2191759 Output 1837987 application/pdf Version of Record true Distributed under the terms of a Creative Commons Attribution 4.0 License (CC BY 4.0). true eng https://creativecommons.org/licenses/by/4.0/
title Mid-gap trap state-mediated dark current in organic photodiodes
spellingShingle Mid-gap trap state-mediated dark current in organic photodiodes
Oskar Sandberg
CHRISTINA KAISER
Stefan Zeiske
Paul Meredith
Ardalan Armin
title_short Mid-gap trap state-mediated dark current in organic photodiodes
title_full Mid-gap trap state-mediated dark current in organic photodiodes
title_fullStr Mid-gap trap state-mediated dark current in organic photodiodes
title_full_unstemmed Mid-gap trap state-mediated dark current in organic photodiodes
title_sort Mid-gap trap state-mediated dark current in organic photodiodes
author_id_str_mv 9e91512a54d5aee66cd77851a96ba747
dd1e83902e695cade3f07fbb6180c7f8
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31e8fe57fa180d418afd48c3af280c2e
22b270622d739d81e131bec7a819e2fd
author_id_fullname_str_mv 9e91512a54d5aee66cd77851a96ba747_***_Oskar Sandberg
dd1e83902e695cade3f07fbb6180c7f8_***_CHRISTINA KAISER
0c9c5b89df9ac882c3e09dd1a9f28fc5_***_Stefan Zeiske
31e8fe57fa180d418afd48c3af280c2e_***_Paul Meredith
22b270622d739d81e131bec7a819e2fd_***_Ardalan Armin
author Oskar Sandberg
CHRISTINA KAISER
Stefan Zeiske
Paul Meredith
Ardalan Armin
author2 Oskar Sandberg
CHRISTINA KAISER
Stefan Zeiske
Nasim Zarrabi
Sam Gielen
Wouter Maes
Koen Vandewal
Paul Meredith
Ardalan Armin
format Journal article
container_title Nature Photonics
container_volume 17
container_issue 4
container_start_page 368
publishDate 2023
institution Swansea University
issn 1749-4885
1749-4893
doi_str_mv 10.1038/s41566-023-01173-5
publisher Springer Science and Business Media LLC
college_str Faculty of Science and Engineering
hierarchytype
hierarchy_top_id facultyofscienceandengineering
hierarchy_top_title Faculty of Science and Engineering
hierarchy_parent_id facultyofscienceandengineering
hierarchy_parent_title Faculty of Science and Engineering
department_str School of Biosciences, Geography and Physics - Physics{{{_:::_}}}Faculty of Science and Engineering{{{_:::_}}}School of Biosciences, Geography and Physics - Physics
url http://dx.doi.org/10.1038/s41566-023-01173-5
document_store_str 1
active_str 0
description Photodiodes are ubiquitous in industry and consumer electronics. New applications for photodiodes are constantly emerging, such as the internet of things and wearable electronics that demand different mechanical and optoelectronic properties from those provided by conventional inorganic devices. This has stimulated considerable interest in the use of next generation semiconductors, particularly the organics, which provide a vast palette of available optoelectronic properties, can be incorporated into flexible form factor geometries, and promise extremely low cost, low embodied energy manufacturing from earth abundant materials. The sensitivity of a photodiode to low light intensities (typically important in these new applications) depends critically on the dark current. Organic photodiodes, however, are characterized by a much higher dark current than expected for thermally excited band-toband transitions. Here, we show that the lower limit of the dark current is given by recombination via mid-gap trap states. This new insight is generated from temperature dependent dark current measurements of narrow-gap photodiodes for the near-infrared. Based on Shockley-Read-Hall statistics, a diode equation is derived which can be used to determine an upper limit for the specific detectivity and to explain the general trend observed for the light to dark current ratio as a function of the experimental open-circuit voltage for a series of organic photodiodes. A detailed understanding of the origins of noise in any detector is fundamental to defining performance limitations and thus is critical to materials and device selection, design and optimisation for all applications. Our work establishes these important principles for organic semiconductor photodiodes for the near-infrared.
published_date 2023-04-01T17:06:38Z
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