Journal article 271 views 8 downloads
Mid-gap trap state-mediated dark current in organic photodiodes
Nature Photonics, Volume: 17, Issue: 4, Pages: 368 - 374
Swansea University Authors:
Oskar Sandberg , Paul Meredith
, Ardalan Armin
-
PDF | Version of Record
This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made.
Download (1.75MB)
DOI (Published version): 10.1038/s41566-023-01173-5
Abstract
Photodiodes are ubiquitous in industry and consumer electronics. Constantly emerging new applications for photodiodes demand different mechanical and optoelectronic properties from those provided by conventional inorganic-based semiconductor devices. This has stimulated considerable interest in the...
Published in: | Nature Photonics |
---|---|
ISSN: | 1749-4885 1749-4893 |
Published: |
Springer Science and Business Media LLC
2023
|
Online Access: |
Check full text
|
URI: | https://cronfa.swan.ac.uk/Record/cronfa63125 |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Abstract: |
Photodiodes are ubiquitous in industry and consumer electronics. Constantly emerging new applications for photodiodes demand different mechanical and optoelectronic properties from those provided by conventional inorganic-based semiconductor devices. This has stimulated considerable interest in the use of organic semiconductors, which provide a vast palette of available optoelectronic properties, can be incorporated into flexible form factor geometries, and promise low-cost, low-embodied energy manufacturing from earth-abundant materials. The sensitivity of a photodiode depends critically on the dark current. Organic photodiodes (OPDs), however, are characterized by a much higher dark current than expected for thermally excited radiative transitions. Here we show that the dark saturation current in OPDs is fundamentally limited by mid-gap trap states. This new insight is generated by the universal trend observed for the dark saturation current of a large set of OPDs and further substantiated by sensitive external-quantum-efficiency- and temperature-dependent current measurements. Based on this insight, an upper limit for the specific detectivity is established. A detailed understanding of the origins of noise in any detector is fundamental to defining performance limitations and thus is critical to materials and device selection, and design and optimization for all applications. Our work establishes these important principles for OPDs. |
---|---|
Keywords: |
Photonic devices, Polymers |
College: |
Faculty of Science and Engineering |
Funders: |
EPSRC |
Issue: |
4 |
Start Page: |
368 |
End Page: |
374 |